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  • Abernathy, Cammy R.  (3)
  • Physics  (3)
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  • Physics  (3)
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  • 1
    Online Resource
    Online Resource
    Growth and characterization of (Sc2O3)x(Ga2O3)1−x by molecular beam epitaxy
    American Vacuum Society ; 2022
    In:  Journal of Vacuum Science & Technology A Vol. 40, No. 4 ( 2022-07-01)
    Details
    In: Journal of Vacuum Science & Technology A, American Vacuum Society, Vol. 40, No. 4 ( 2022-07-01)
    Abstract: (Sc2O3)x(Ga2O3)1−x was grown by molecular beam epitaxy at low temperatures (100 °C) using a variety of growth sequences to avoid surface segregation of Ga. Continuous and digital growth techniques always produced Ga segregation. This surface segregation was attributed to the stronger bond between the Sc and O compared to the Ga and O. A digital growth technique (alternate opening of Sc and Ga shutters with the O shutter open continuously during the growth) was unsuccessful in eliminating this effect. The segregation was eliminated using a growth technique in which the Ga shutter was closed for a set amount of time toward the end of the growth while the O and Sc shutters remained open. Characterization with reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy revealed the growth of a fine-grained polycrystalline film under these conditions. A third growth technique was used that involved closing the Ga shutter for a set amount of time toward the end of the growth while the O and Sc shutters were open continuously. This technique was successful in depositing a uniform film. However, the breakdown field was only 1.40 MV/cm (at 1 mA/cm2). The addition of Ga to Sc2O3 diminished the insulating properties of the film. These initial experiments indicate that phase segregation is likely to be a major issue with most growth techniques and that alloying Ga2O3 with elements other than Sc, such as Gd or Al, might be a more successful approach.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/6.0001805
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2022
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN
    AIP Publishing ; 2001
    In:  Applied Physics Letters Vol. 79, No. 9 ( 2001-08-27), p. 1312-1314
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 79, No. 9 ( 2001-08-27), p. 1312-1314
    Abstract: Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnN is reported. The GaMnN contains 7.0% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction and reflection high-energy electron diffraction. Both magnetic and magnetotransport data are reported. The results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaN and forming the ferromagnetic semiconductor GaMnN. At 25 K the anomalous Hall term vanishes, indicating a Curie temperature between 10 and 25 K.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1397763
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy
    AIP Publishing ; 2001
    In:  Applied Physics Letters Vol. 79, No. 19 ( 2001-11-05), p. 3128-3130
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 79, No. 19 ( 2001-11-05), p. 3128-3130
    Abstract: Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnP:C is reported. The GaMnP:C contains 9.4% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction, reflection high-energy electron diffraction, and transmission electron microscopy. Both magnetization and magnetotransport data are reported. The results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaP:C and forming the ferromagnetic semiconductor GaMnP:C. Temperature-dependent magnetization and anomalous Hall data show that magnetic behavior persists to at least 200 K, which is a very high value for a III–V based dilute magnetic semiconductor.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1416472
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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