In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 690 ( 2001)
Abstract:
Epitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN films grown at 700 °C with 2.8% Mn show hysteresis at 300 K, while temperature-dependent magnetization measurements indicate that the magnetism may persist to much higher temperatures ( 〉 325 K). Samples of AlGaMnN have also been prepared for the first time that show improved surface morphology compared to GaMnN but which show only paramagnetic behavior.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-690-F1.5
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2001
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