In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 4S ( 1997-04-01), p. 2514-
Abstract:
We have developed a decoupled plasma source (DPS) etcher for polysilicon and polycide etching. A series of experiments has been carried out to study polycide gate etching in the DPS etcher. By combining conventional techniques of process evaluation with in situ monitoring of ions and radical chemistry and with real-time ion flux density distribution measurements, we quantitatively determined trends in polycide processing and etching with simple Cl 2 and He/O 2 chemistry. Performance parameters, such as etch rate, etch rate microloading, etch rate uniformity, profile, profile microloading and profile uniformity on WSi x , oxide, polysilicon and photoresist, were measured at 24 points on the surface matrix. These results were correlated with the physical and chemical parameters of the decoupled plasma, such as ion flux distribution, DC-bias potential across the wafer, plasma ion composition and concentration of neutrals. A vertical profile can be obtained with highly selective polycide etch in a single step main etch with Cl 2 and He/O 2 using a decoupled plasma silicon etch reactor.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.2514
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
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