In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 26, No. 2 ( 2008-03-01), p. 624-626
Abstract:
The electrical characteristics of Gd2O3-incorporated HfO2 multimetal dielectric n-type doped gallium arsenide (GaAs) metal-oxide semiconductor capacitors with different Gd2O3 and HfO2 thicknesses are investigated. A top Gd2O3 with bottom HfO2 bilayer dielectric shows excellent capacitance-voltage (C-V) characteristics and the lowest hysteresis. Scaling down of this Gd2O3∕HfO2 dielectric results in substantial reduction in hysteresis compared to HfO2 without significant change in equivalent oxide thickness. A qualitative explanation of reduced hysteresis with an electric field model is presented.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2008
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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