In:
Journal of Applied Physics, AIP Publishing, Vol. 100, No. 11 ( 2006-12-01)
Abstract:
We demonstrate that the electrostatic polarization of an organic semiconductor (OSC) by a gate dielectric with stored charges and electric fields enables the realization of both threshold voltage tuning and inversion process control of OSC thin-film field-effect transistors (OFETs). As a result, OFETs based on typically unipolar n-channel copper hexadecafluorophthalocyanine semiconductor thin films, deposited on a silicon dioxide quasipermanent charged electret as a gate insulator, show unipolar p-channel “inversion” operation in ambient air and form complementary monolithic, single-semiconductor inverter circuits. The field produced by patterned, grid-controlled negative corona charging and subsequent thermal annealing (before semiconductor deposition) electrostatically induces sufficient positive charges to provide significant hole mobility, ca. 0.011cm2V−1s−1, in response to moderate additional negative gate voltages.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2006
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
Permalink