In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 1L ( 2005-01-01), p. L101-
Abstract:
We present all-monolithic InAlGaAs/InP vertical cavity surface emitting lasers (VCSELs) emitting wavelength of 1.3 µm grown by metal organic chemical vapor deposition (MOCVD). The devices with tunnel junction (TJ) and the air-gap aperture showed the performances as high as output power of 1.1 mW and as low as threshold current of 1.9 mA operating in single-mode at room temperature. We obtained the emitting transverse wavelength of 1333.1 nm with side mode suppression ratio (SMSR) of 40 dB, the continuous wave (CW) operation of temperature over 80°C, and modulation bandwidth exceeding 2.5 Gbit/s.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.L101
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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