In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 7B ( 1999-07-01), p. L802-
Abstract:
This work performs Si ion implantation the electrical conductive type of the p-GaN film from p-type to n-type. Multiple implantation method is also used to form a
uniform Si implanted region in the p-type GaN epitaxial layer. Implant energies for the multiple implantation are 40, 100, and 200 KeV. The implant dose is 5×10 15 cm -2 for each implant energy. After implantation, the samples are annealed in a N 2 ambient
for different annealing temperatures and annealing times. The activation efficiency reaches as high as 20% when annealing the sample at 1000°C. The carrier activation
energy is about 720 meV. The low activation energy indicates that the hopping process mechanism is the dominant mechanism for the activation of the Si
implantation in p-GaN. Moreover, the rectifying I-V characteristic of the p-n GaN
diode is also examined.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.L802
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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