In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 3R ( 1998-03-01), p. 758-
Abstract:
Using a molecular beam epitaxy/scanning tunneling microscopy (MBE/STM) system, we have compared the surface morphology of GaAs grown by MBE and migration-enhanced epitaxy (MEE) at a substrate temperature of 300°C, which is much lower than normal MBE growth temperature. In terms of surface flatness, the difference between MBE and MEE was clearly visible. The surface roughness of MEE-grown GaAs was at most 2-monolayer and the surface was covered with large terraces with small islands on them. On the other hand, in spite of the clear reflection high energy electron diffraction (RHEED) intensity oscillation during the growth, the low-temperature MBE-grown surface was very rough and large terraces could not be seen on the surface. We concluded that these results are due to the differences in the growth mechanisms of MBE and MEE.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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