In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 63, No. 1 ( 2024-01-01), p. 01SP15-
Kurzfassung:
Transition metal dichalcogenides, such as MoS 2 , have garnered considerable attention because of their significant potential in device applications. A limiting factor in their development is the formation of a Schottky barrier with strong Fermi-level pinning at the metal–MoS 2 interface. Herein, we report Kelvin probe force microscopy (KPFM) measurements of the work function (WF) modulation at this interface. We found an increase in the WF at the metal–MoS 2 interface, depending on the layer number and the contact metal used, indicating the formation of a Schottky barrier. These variations potentially arise from the layer-number-dependent strength of Fermi-level pinning in MoS 2 . Visualization and calculation of WF modulation at metal–MoS 2 interfaces using the KPFM method can help understand the structure and properties of such interfaces.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/acfa07
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2024
ZDB Id:
218223-3
ZDB Id:
2006801-3
Permalink