In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 9S2 ( 2012-09-01), p. 09MF06-
Abstract:
We report the growth of hexagonal Zn 0.58 Mg 0.42 O thin films on a c -plane sapphire substrate via pulsed laser deposition using Zn 0.7 Mg 0.3 O/Zn 0.9 Mg 0.1 O/ZnO stacked buffer layers of various thicknesses. The effects of the stacked buffer layer thickness on the structural and optical properties were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), energy dispersive X-ray (EDX), and UV–visible spectroscopy. The XRD results showed that whereas the cubic and hexagonal phases formed without a stacked buffer layer, only the hexagonal Zn 0.58 Mg 0.42 O phase grew in the stacked buffer layer configuration. The stacked buffer layer could accommodate structural inconsistencies and prevent phase separation in high-Mg films. As the thickness of each stacked buffer layer decreased, the crystalline quality of the hexagonal Zn 0.5 Mg 0.5 O film was enhanced.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.09MF06
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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