In:
Applied Physics Express, IOP Publishing, Vol. 15, No. 7 ( 2022-07-01), p. 071002-
Abstract:
This work used the first-principles simulations to investigate interactions between orbital and electronic properties in the GaN m /AlN n quantum structure. By rotating the quantum well plane 90˚ from the c -plane, we delineated responses including a uniform bond length, an equal charge distribution on both well sides, and orbital changes at the quantum level near the valence band maximum (from the degenerated p x / p y to the separated p y and p z ). The found responses would positively contribute to wavelength reduction, quantum efficiency, and surface-emitting geometry. The tunable bandgap enables the production of electro-optic devices of Al-rich AlGaN for DUV applications.
Type of Medium:
Online Resource
ISSN:
1882-0778
,
1882-0786
DOI:
10.35848/1882-0786/ac71f4
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
2417569-9
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