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  • 1
    Online Resource
    Online Resource
    Enhanced efficiency and stability of PM6:Y6 organic solar cells using hydrophobic self-assembled monolayers
    AIP Publishing ; 2024
    In:  Applied Physics Letters Vol. 125, No. 5 ( 2024-07-29)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 125, No. 5 ( 2024-07-29)
    Abstract: A hydrophobic self-assembled monolayer designated as Me-4PACz was used as a hole-selective interlayer in PM6:Y6 organic photovoltaic devices. A comparative analysis was conducted on the performance of solar cells incorporating Me-4PACz, 2PACz, and the conventional hole material MoO3. The device in which Me-4PACz was utilized exhibited higher transmittance and lower resistivity than the solar cell using MoO3. Furthermore, the solar cell based on Me-4PACz demonstrated enhanced charge transport capability and optimized contact relative to those employing 2PACz. The device incorporating Me-4PACz achieved superior long-term stability and the highest power conversion efficiency of 17.06%, outperforming the devices utilizing 2PACz (15.67%) and MoO3 (14.09%) as hole transport materials. These results indicate the potential of hydrophobic Me-4PACz as a promising candidate for hole transport in organic solar cells.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0215972
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2024
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    Influence of intrinsic amorphous silicon passivation layer on the dark-state stability of SHJ cells
    AIP Publishing ; 2023
    In:  Applied Physics Letters Vol. 122, No. 18 ( 2023-05-01)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 122, No. 18 ( 2023-05-01)
    Abstract: Silicon heterojunction (SHJ) solar cells with a two-densities stacked intrinsic hydrogenated amorphous silicon (i-a-Si:H) thin film passivated crystalline silicon surface have high VOC and efficiency. We investigated the dark stability of cells varied with the microstructure of i-a-Si:H layers. It has been found that the dark degradation is mainly from the change in the silicon hydrogen bonded configuration associated with voids size. Furthermore, the less degradation exists on cells with thicker dense i-a-Si:H layers, which results from the high bonded hydrogen content after the enhanced light-soaking (LS) and less change in voids during the dark storage in the i-a-Si:H layers. The microstructure changes, including bonded hydrogen content, voids size, and voids quantity, are related to the initial microstructure of i-a-Si:H layers. This can be illustrated by two actions of non-bonded hydrogens immersed in the undense part of the silicon network. As a result, to enhance the bonded hydrogen content in the i-a-Si:H layers is a preferred method to improve the dark stability of SHJ solar cell after LS.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0144574
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    A tuning method based on the coupled mode frequencies in biperiodic coupled-cavity linear accelerator
    AIP Publishing ; 2018
    In:  Review of Scientific Instruments Vol. 89, No. 12 ( 2018-12-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 89, No. 12 ( 2018-12-01)
    Abstract: A coupled-cavity linac (CCL) is widely used around the world in many fields. The radio frequency design is always a fundamental and crucial problem in CCL. In biperiodic structures, especially side-coupled structures, entirely different structures between accelerating cavities (ACs) and coupled cavities (CCs) will cause different frequency drops (δf) with the introduction of coupling slots. In order to achieve precise and consistent frequencies in each cell, the rule of individual cavity frequency drops should be figured out. A model of lumped resonant circuits is chosen to provide accurate prediction for normal mode frequencies. Through solving equivalent circuit equations, a parameter called frequency gap difference (ΔFg) is proposed, whose value is directly proportional to the frequency difference (df) between AC and CC and the ratio is one-to-one when AC frequency ( fa) is close to CC frequency ( fc). Based on the property of ΔFg, a simplified method on how to design and tune a triplet CCL is proposed; instead of tuning each individual cell, the new method only requires measuring the frequencies of the coupled normal modes, which considerably simplifies the tuning process and reduces the turn-around time. The particular design flow and tuning method have been successfully applied in the Nanjing University CCL Project. In addition, through comparing cavities with and without coupling slots, the value of frequency drops with different coupling coefficients is revealed and analyzed.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.5051567
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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  • 4
    Online Resource
    Online Resource
    High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film
    AIP Publishing ; 2023
    In:  Applied Physics Letters Vol. 123, No. 25 ( 2023-12-18)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 123, No. 25 ( 2023-12-18)
    Abstract: One approach to extend the acoustic applications of aluminum nitride (AlN) in the GHz frequency range is to take advantage of the piezoelectric performance and high acoustic velocity (∼11 350 m/s) along the c-axis of this material. In particular, in the case of high-frequency micro-electromechanical systems, it should be possible to simplify the construction of resonators by using a-plane AlN-based structures. In the work described in this Letter, a single-crystalline a-plane AlN layer on an r-plane sapphire substrate is obtained by combining sputtering and high-temperature annealing. Based on this non-polar AlN, a resonator with only planar interdigital transducer electrodes is fabricated. Experiments on this resonator reveal simultaneous excitation of an anisotropic Rayleigh surface acoustic wave (SAW) at 2.38 GHz and a laterally excited bulk acoustic wave (LBAW) at 4.00 GHz. It is found that the Rayleigh SAW exhibits outstanding performance, with a quality factor as high as 2458 and great stability under variations in temperature. The LBAW at 4.00 GHz is excited by pure planar interdigitated electrodes without the need for any cavity or bottom electrode structure, thus demonstrating a promising approach to the construction of high-frequency resonators with a relatively simple structure.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0181087
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    Instrumentation of a compact random-access photostimulator based on acousto-optic deflectors
    AIP Publishing ; 2012
    In:  Review of Scientific Instruments Vol. 83, No. 2 ( 2012-02-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 83, No. 2 ( 2012-02-01)
    Abstract: Recently developed optogenetics provides a fast, non-invasive, and efficient method for cell activation. However, it is difficult for the optical stimulators used for optogenetics to realize selective multi-site fast activation. In this paper, we developed a random-access photostimulator based on a pair of perpendicularly oriented acousto-optic deflectors. Precise laser targeting in the x-y plane was verified, and the lateral spatial resolution of laser intensity after the objective was measured as ∼1.38 μm. Photostimulaton of ChETA-expressing astrocytes induced reliable inward currents only if the laser beam was directed onto the targeted cell. In the ChR2-expresing neuron, multiple locations along two dendrites were stimulated, and spatiotemporal integration was observed in the soma with fast multi-site activation. These results demonstrated that this random-access photostimulator would be a powerful tool for selective multi-site fast activation. The compact and modular design of this photostimulator makes it easily integrated with different commercial microscopes, and thus widely popularized in many laboratories.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.3689954
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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  • 6
    Online Resource
    Online Resource
    Precision measurement of refractive index of air based on laser synthetic wavelength interferometry with Edlén equation estimation
    AIP Publishing ; 2015
    In:  Review of Scientific Instruments Vol. 86, No. 8 ( 2015-08-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 86, No. 8 ( 2015-08-01)
    Abstract: A novel method for the precision measurement of refractive index of air (nair) based on the combining of the laser synthetic wavelength interferometry with the Edlén equation estimation is proposed. First, a nair_e is calculated from the modified Edlén equation according to environmental parameters measured by low precision sensors with an uncertainty of 10−6. Second, a unique integral fringe number N corresponding to nair is determined based on the calculated nair_e. Then, a fractional fringe ε corresponding to nair with high accuracy can be obtained according to the principle of fringe subdivision of laser synthetic wavelength interferometry. Finally, high accurate measurement of nair is achieved according to the determined fringes N and ε. The merit of the proposed method is that it not only solves the problem of the measurement accuracy of nair being limited by the accuracies of environmental sensors, but also avoids adopting complicated vacuum pumping to measure the integral fringe N in the method of conventional laser interferometry. To verify the feasibility of the proposed method, comparison experiments with Edlén equations in short time and in long time were performed. Experimental results show that the measurement accuracy of nair is better than 2.5 × 10−8 in short time tests and 6.2 × 10−8 in long time tests.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.4928159
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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  • 7
    Online Resource
    Online Resource
    Scalable and efficient Sb2S3 thin-film solar cells fabricated by close space sublimation
    AIP Publishing ; 2019
    In:  APL Materials Vol. 7, No. 4 ( 2019-04-01)
    Details
    In: APL Materials, AIP Publishing, Vol. 7, No. 4 ( 2019-04-01)
    Abstract: Antimony sulfide as a cost-effective, low-toxic, and earth-abundant solar cell absorber with the desired bandgap was successfully deposited using a scalable close space sublimation technique. The deposition process can separately control the substrate and source temperature with better engineering of the absorber quality. The device performance can reach 3.8% with the configuration of glass/FTO/CdS/Sb2S3/graphite back contact. The defect formation energy and the corresponding transition levels were investigated in detail using theoretical calculations. Our results suggest that Sb2S3 exhibits intrinsic p-type owing to S-on-Sb antisites (SSb) and the device performance is limited by the S vacancies. The localized conduction characterization at nanoscale shows that the non-cubic Sb2S3 has conductive grains and benign grain boundaries. The study of the defects, microstructure, and nanoscale conduction behavior suggests that Sb2S3 could be a promising photovoltaic candidate for scalable manufacturing.
    Type of Medium: Online Resource
    ISSN: 2166-532X
    URL: Article
    DOI: 10.1063/1.5090773
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2722985-3
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  • 8
    Online Resource
    Online Resource
    Silicon carbide for integrated photonics
    AIP Publishing ; 2022
    In:  Applied Physics Reviews Vol. 9, No. 3 ( 2022-09-01)
    Details
    In: Applied Physics Reviews, AIP Publishing, Vol. 9, No. 3 ( 2022-09-01)
    Abstract: Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a wide range of photonic technologies with desired complexity and stability. While the next generation of applications such as ultra-high speed optical transceivers, neuromorphic computing and terabit-scale communications demand further lower power consumption and higher operating frequency. Complementing the leading silicon-based material platforms, the third-generation semiconductor, silicon carbide (SiC), offers a significant opportunity toward the advanced development of PICs in terms of its broadest range of functionalities, including wide bandgap, high optical nonlinearities, high refractive index, controllable artificial spin defects and complementary metal oxide semiconductor-compatible fabrication process. The superior properties of SiC have enabled a plethora of nano-photonic explorations, such as waveguides, micro-cavities, nonlinear frequency converters and optically-active spin defects. This remarkable progress has prompted the rapid development of advanced SiC PICs for both classical and quantum applications. Here, we provide an overview of SiC-based integrated photonics, presenting the latest progress on investigating its basic optoelectronic properties, as well as the recent developments in the fabrication of several typical approaches for light confinement structures that form the basic building blocks for low-loss, multi-functional and industry-compatible integrated photonic platform. Moreover, recent works employing SiC as optically-readable spin hosts for quantum information applications are also summarized and highlighted. As a still-developing integrated photonic platform, prospects and challenges of utilizing SiC material platforms in the field of integrated photonics are also discussed.
    Type of Medium: Online Resource
    ISSN: 1931-9401
    URL: Article
    DOI: 10.1063/5.0079649
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 2265524-4
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  • 9
    Online Resource
    Online Resource
    In situ study of the growth of ZnO nanosheets using environmental scanning electron microscope
    AIP Publishing ; 2007
    In:  Applied Physics Letters Vol. 90, No. 23 ( 2007-06-04)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 90, No. 23 ( 2007-06-04)
    Abstract: The authors demonstrated an investigation of the real-time growth of ZnO nanosheets via in situ observation in an environmental scanning electron microscope. It was found that ZnO nanosheets were grown in a two-stage process: [21¯1¯0]-oriented nanowires were grown first, and then ZnO nanosheets grew perpendicularly on the parent nanowires along the [0001] axis. The authors’ results revealed that the change of the ZnO growth direction from [21¯1¯0] (a axis) to [0001] (c axis) can be achieved by control of the growth temperature.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2746947
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2007
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 10
    Online Resource
    Online Resource
    Mechanisms for plasma cryogenic etching of porous materials
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 111, No. 17 ( 2017-10-23)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 111, No. 17 ( 2017-10-23)
    Abstract: Porous materials are commonly used in microelectronics, as they can meet the demand for continuously shrinking electronic feature dimensions. However, they are facing severe challenges in plasma etching, due to plasma induced damage. In this paper, we present both the plasma characteristics and surface processing during the etching of porous materials. We explain how the damage occurs in the porous material during plasma etching for a wide range of chuck temperatures and the responsible mechanism for plasma damage-free etching at cryogenic temperature, by a combination of experiments and numerical modeling.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4999439
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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