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  • Online Resource  (19)
  • AIP Publishing  (19)
  • Physics  (19)
  • 1
    Online Resource
    Online Resource
    High switching efficiency in FePt exchange coupled composite media mediated by MgO exchange control layers
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 111, No. 4 ( 2017-07-24)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 111, No. 4 ( 2017-07-24)
    Abstract: Satisfying the mutually conflicting requirements of easy switchability and high thermal stability still remains a hindrance to achieving ultra-high areal densities in hard disk drives. Exchange coupled composite media used with proper exchange control layers (ECLs) presents a potential solution to circumvent this hindrance. In this work, we have studied the role of MgO and Ta ECLs of different thicknesses in reducing the switching field of FePt media. MgO ECL was found to be more effective than a Ta ECL. For a 2 nm MgO ECL, the switching field could be reduced by 41% and at the cost of only a limited loss in thermal stability. Furthermore, a very high switching efficiency of 1.9 was obtained using 2 nm MgO ECL. So, with a proper choice of ECL material and thickness, the switching field of FePt media can be substantially reduced while ensuring high thermal stability and a better signal-to-noise ratio, thus potentially paving the way for very high areal density media.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4996366
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    Exchange coupled CoPt/FePtC media for heat assisted magnetic recording
    AIP Publishing ; 2018
    In:  Applied Physics Letters Vol. 112, No. 14 ( 2018-04-02)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 112, No. 14 ( 2018-04-02)
    Abstract: L10 FePtC granular media are being studied as potential future magnetic recording media and are set to be used in conjunction with heat assisted magnetic recording (HAMR) to enable recording at write fields within the range of current day recording heads. Media structures based on a FePtC storage layer and a capping layer can alleviate the switching field distribution (SFD) requirements of HAMR and reduce the noise originating from the writing process. However, the current designs suffer from SFD issues due to high temperature writing. To overcome this problem, we study a CoPt/FePtC exchange coupled composite structure, where FePtC serves as the storage layer and CoPt (with higher Curie temperature, Tc) as the capping layer. CoPt remains ferromagnetic at near Tc of FePtC. Consequently, the counter exchange energy from CoPt would reduce the noise resulting from the adjacent grain interactions during the writing process. CoPt/FePtC bilayer samples with different thicknesses of CoPt were investigated. Our studies found that CoPt forms a continuous layer at a thickness of 6 nm and leads to considerable reduction in the saturation field and its distribution.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5012815
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 211245-0
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  • 3
    Online Resource
    Online Resource
    Large upper critical field and irreversibility field in MgB2 wires with SiC additions
    AIP Publishing ; 2005
    In:  Applied Physics Letters Vol. 86, No. 9 ( 2005-02-28)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 86, No. 9 ( 2005-02-28)
    Abstract: Resistive transition measurements are reported for MgB2 strands with SiC dopants. The starting Mg powders were 325 mesh 99.9% pure, and the B powders were amorphous, 99.9% pure, and at a typical size of 1–2 μm. The SiC was added as 10 mol % of SiC to 90 mol % of binary MgB2 [(MgB2)0.9(SiC)0.1]. Three different SiC powders were used; the average particle sizes were 200 nm, 30 nm, and 15 nm. The strands were heat treated for times ranging from 5 to 30 min at temperatures from 675 °C to 900 °C. Strands with 200 nm size SiC additions had μ0Hirr and Bc2 which maximized at 25.4 T and 29.7 T after heating at 800 °C for 30 min. The highest values were seen for a strand with 15 nm SiC heated at 725 °C for 30 min which had a μ0Hirr of 29 T and a Bc2 higher than 33 T.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1872210
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2005
    detail.hit.zdb_id: 211245-0
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  • 4
    Online Resource
    Online Resource
    Excellent wear life of silicon nitride/tetrahedral amorphous carbon bilayer overcoat on functional tape heads
    AIP Publishing ; 2015
    In:  Applied Physics Letters Vol. 106, No. 9 ( 2015-03-02)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 106, No. 9 ( 2015-03-02)
    Abstract: Developing ultrathin and highly wear-resistant overcoats for magnetic tape heads is one of the current research areas of interest, because of its potential to delay pole tip recession and increase the operational lifetime of high areal density tape drives. Using optimized process conditions and an appropriate overcoat design, we report on the development of a ∼20 nm thick silicon nitride/tetrahedral amorphous carbon (Si/SiNx/ta-C) bilayer overcoat, where the ta-C film was deposited by a filtered cathodic vacuum arc process. The bilayer overcoat deposited on a functional tape head survived 40–50 × 106 m of testing with commercial tape media under standard industrial testing conditions. The excellent wear resistance of the overcoat was attributed to the generation of high (∼72%) sp3 carbon content and the formation of strong interfacial bonds, such as Si-C, C=N, nitrile, and (Al, Ti)N at the interfaces, as confirmed by various spectroscopic techniques. This study demonstrates the pivotal role of high sp3 carbon bonding combined with enhanced interfacial bonding in developing an ultrathin yet durable protective overcoat for magnetic tape heads.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4914353
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
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  • 5
    Online Resource
    Online Resource
    Non-destructive patterning of 10 nm magnetic island array by phase transformation with low-energy proton irradiation
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 111, No. 15 ( 2017-10-09)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 111, No. 15 ( 2017-10-09)
    Abstract: Nano-patterning on the order of sub-10 nm is integral to achieve high-density nano-scale devices for various data storage and data processing applications. However, the additional requirement of planarization and unwanted side-effects of physical or chemical etching have so far limited the patterning of sub-10 nm devices. In this work, we have demonstrated the creation of an array of ∼10 nm ferromagnetic islands through selective phase transformation of paramagnetic multilayers by low-energy proton irradiation. Paramagnetic Co3O4/Pd multilayers masked with patterned PMMA (polymethyl methacrylate) were reduced to ferromagnetic Co/Pd by proton irradiation. A clear contrast of the nano-islands was observed using magnetic force microscopy, establishing the formation of ferromagnetic nano-islands with perpendicular magnetic anisotropy. This process provides a way to circumvent the side-effects associated with both conventional nano-scale pattering and high-energy ion irradiation. Therefore, phase transformation by low energy proton irradiation can be used for patterning sub-10 nm nano-islands, not only for magnetic data storage but also for patterning various opto-electronic and spintronic devices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4998670
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
    Online Resource
    Online Resource
    Effect of FePt on resonant behaviour of a near field transducer for high areal density heat assisted magnetic recording
    AIP Publishing ; 2014
    In:  Applied Physics Letters Vol. 104, No. 11 ( 2014-03-17)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 104, No. 11 ( 2014-03-17)
    Abstract: This paper presents an experimental study of the effect of magnetic media on the resonant behavior of nano-apertures which are used as near-field transducers in near-field applications. Transmission spectra through C-shaped nano-apertures with and without a magnetic medium in the near-field were measured. A significant shift in the resonant wavelength of the C-apertures was predicted by simulations and subsequently observed experimentally. The resonant wavelength shift depends on the thickness of the magnetic medium and starts to saturate as the magnetic medium becomes thicker. Near-field intensity simulations illustrate dimensional parameter requirements for C-aperture design when a magnetic storage medium is placed within the near field.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4868540
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 211245-0
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  • 7
    Online Resource
    Online Resource
    Excellent c -Si surface passivation by low-temperature atomic layer deposited titanium oxide
    AIP Publishing ; 2014
    In:  Applied Physics Letters Vol. 104, No. 25 ( 2014-06-23)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 104, No. 25 ( 2014-06-23)
    Abstract: In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiOx) films are able to provide a—up to now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The surface passivation provided by the ALD TiOx films is activated by a post-deposition anneal and subsequent light soaking treatment. Ultralow effective surface recombination velocities down to 2.8 cm/s and 8.3 cm/s, respectively, are achieved on n-type and p-type float-zone c-Si wafers. Detailed analysis confirms that the TiOx films are nearly stoichiometric, have no significant level of contaminants, and are of amorphous nature. The passivation is found to be stable after storage in the dark for eight months. These results demonstrate that TiOx films are also capable of providing excellent passivation of undiffused c-Si surfaces on a comparable level to thermal silicon oxide, silicon nitride, and aluminum oxide. In addition, it is well known that TiOx has an optimal refractive index of 2.4 in the visible range for glass encapsulated solar cells, as well as a low extinction coefficient. Thus, the results presented in this work could facilitate the re-emergence of TiOx in the field of high-efficiency silicon wafer solar cells.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4885096
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 211245-0
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  • 8
    Online Resource
    Online Resource
    Novel in   situ method for locating virtual source in high-rate electron-beam evaporation
    AIP Publishing ; 1994
    In:  Applied Physics Letters Vol. 65, No. 2 ( 1994-07-11), p. 251-253
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 65, No. 2 ( 1994-07-11), p. 251-253
    Abstract: The concept of virtual source simplifies calculation of thickness distribution on extended substrates in high rate vacuum coating employing electron-beam heating. The height of the point (virtual source), from which vapor can be assumed to emanate in accordance with Knudsen’s cosine law, to yield the experimentally obtained thickness distribution, is calculated and this establishes the position of virtual source. Such as post facto determination is cumbersome as it is valid for the prescribed material evaporating at a certain rate in a specified geometry. A change in any of these entails a fresh measurement. Experimenters who use a large number of materials and deposit at different rates therefore have to carry out a number of trials before they can locate the virtual source at the desired deposition parameters. An in situ method for obtaining virtual source position can go a long way in reducing the labor of these experiments. A novel in situ method is described to locate the virtual source.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.112970
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
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  • 9
    Online Resource
    Online Resource
    Hardness, elastic modulus, and structure of very hard carbon films produced by cathodic-arc deposition with substrate pulse biasing
    AIP Publishing ; 1996
    In:  Applied Physics Letters Vol. 68, No. 6 ( 1996-02-05), p. 779-781
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 68, No. 6 ( 1996-02-05), p. 779-781
    Abstract: The hardness, elastic modulus, and structure of several amorphous carbon films on silicon prepared by cathodic-arc deposition with substrate pulse biasing have been examined using nanoindentation, energy loss spectroscopy (EELS), and cross-sectional transmission electron microscopy. EELS analysis shows that the highest sp3 contents (85%) and densities (3.00 g/cm3) are achieved at incident ion energies of around 120 eV. The hardness and elastic modulus of the films with the highest sp3 contents are at least 59 and 400 GPa, respectively. These values are conservative lower estimates due to substrate influences on the nanoindentation measurements. The films are predominantly amorphous with a ∼20 nm surface layer which is structurally different and softer than the bulk.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.116530
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
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  • 10
    Online Resource
    Online Resource
    Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits
    AIP Publishing ; 2014
    In:  Applied Physics Letters Vol. 105, No. 11 ( 2014-09-15)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 105, No. 11 ( 2014-09-15)
    Abstract: Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 MΩ/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10 kΩ/sq (of the order of its initial value). Moreover, the maximum current density of ∼1.2 × 107 A/cm2 has been obtained for SLG (1 × 2.5 μm2) on SiO2/Si substrate, which is about an order higher than that of conventionally used copper interconnects.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4895802
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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