In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 42, No. 12 ( 1993), p. 1968-
Abstract:
A stable hydrogen-terminated Si (100) surface was obtained by using a modified mothed. The Si (100) surface was hydrogen passivated during the ex-situ HF-dip followed by the in-situ low-temperature desorption of physisorbed residues. It was found that this procedure is very effective to eliminate the boron spike at the Si MBE layer/p-Si substrate interface. The origon of the boron spike is also discussed.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1993
detail.hit.zdb_id:
203490-6
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