In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 2R ( 1999-02-01), p. 781-
Abstract:
The composition dependence of the optical absorption and the photoelectric
measurements of β-FeSi X thin films prepared by RF-sputtering were studied, where X was in the
range of 1.9–2.3. The absorption coefficient increased steeply at photon energies near 0.9 eV. The photovoltaic properties and the I – V characteristics of β-FeSi X /n-Si heterojunctions were
measured. The open-circuit photovoltage ( V OC ) was about 40 mV, and independent of X and the
substrate temperature. The photoelectric yields of a β-FeSi X /n-Si heterojunctions were measured
and the photoemission thresholds φ 1 and φ 2 were determined to be 0.64 and 0.96 eV for X =2.1.
It was suggested that a deep trap level existed on the interface and a large discontinuity of the conduction band (Δ E c ) was formed. The value of
Δ E c decreased from 0.35 eV to 0.30 eV as the
value of X increased. In addition, the photovoltaic properties of β-FeSi 2 /InP heterojunctions were investigated to obtain Δ E c lower and V OC higher than that of β-FeSi X /n-Si. For β-FeSi X /p-InP, a maximum V OC of 450 mV was obtained under concentrated illumination.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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