In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 8A ( 1997-08-01), p. L1051-
Abstract:
The field emission characteristics of hydrogenated amorphous carbon (a-C:H) films prepared by helical resonator-plasma enhanced chemical vapor deposition (HR-PECVD) are examined. a-C:H films are deposited with CH 4 /H 2 and CH 4 /Ar gases under different substrate RF bias conditions. The properties of a-C:H films are investigated by Raman spectroscopy, Fourier transform IR (FT-IR), UV spectroscopy and elastic recoil detection (ERD). Field emission characteristics of a-C:H coated on Si whiskers which are grown by the vapor-liquid-solid (VLS) method are tested under ultrahigh vacuum. Highly efficient field emission characteristics are achieved in the specimen deposited at a substrate RF bias higher rather than in the ground deposition condition regardless of the nature of the reactant gas. As the substrate RF bias is changed from ground to a higher RF substrate bias, the deposited a-C:H films have lower hydrogen contents and higher sp 2 -bonds. Therefore, the field emission characteristics of a-C:H thin films are affected by the hydrogen contents of the films rather than by the sp 3 /sp 2 ratio.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.L1051
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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