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  • Online Resource  (2)
  • 1995-1999  (2)
  • Physics  (2)
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  • Online Resource  (2)
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  • 1995-1999  (2)
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  • Physics  (2)
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  • 1
    Online Resource
    Online Resource
    American Vacuum Society ; 1998
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 16, No. 3 ( 1998-05-01), p. 1469-1472
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 16, No. 3 ( 1998-05-01), p. 1469-1472
    Abstract: To eliminate corrosion, a subsequent treatment of SF6 plasma after an Al–Cu etching has been carried out. X-ray photoelectron spectroscopy (XPS) studies showed that the F content on the Al–Cu alloy surface caused by the SF6 treatment increased as the chamber pressure increased, and Cl incorporated during the Al–Cu alloy etching was not totally removed by the post-treatment using SF6 gas plasma. However, it was confirmed by scanning electron microscopy (SEM) that corrosion could be eliminated by the SF6 treatment at 300 mTorr. At the same time, the results of angle-resolved XPS showed that elemental Al was distributed under the layer of F-related compounds. These results indicate that SF6 treatment can reduce the corrosion of Al–Cu alloy films by producing a F-containing layer on the etched surface. From the SEM image, the existence of a passivation layer on the Al–Cu alloy film surface by fluorine-related compounds was confirmed. The passivation layer prevents moisture penetration on the SF6-treated surface and suppresses corrosion successfully. The composition of the passivation layer measured by angle-resolved XPS was mostly uniform within a few hundred nm thickness. The passivation film was composed of 32% Al, 43% F, 2% Cl, and 10% O at a SF6 pressure of 300 mTorr. Approximately 2% of Cl was uniformly distributed in the film.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1998
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 1999
    In:  Applied Physics Letters Vol. 74, No. 23 ( 1999-06-07), p. 3510-3512
    In: Applied Physics Letters, AIP Publishing, Vol. 74, No. 23 ( 1999-06-07), p. 3510-3512
    Abstract: It was clearly observed with medium energy ion scattering spectroscopy that the strain in the Si(001)–SiO2 interface of thermal oxides is relaxed by annealing in N2O. The strain relaxation could be correlated with the improved hot-electron hardness of the nitrided oxides compared with the thermal oxides. Based on the direct observation of the strain relaxation, it is suggested that the incorporated N atoms at the interface release the strain and increase the immunity of trap generation under the current stress.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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