In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 23, No. 4 ( 2005-07-01), p. 1650-1653
Abstract:
The etching characteristics of In0.53Ga0.47As and In0.72Ga0.28As0.6P0.4, which are lattice matched to the InP substrate, in HCl∕HF∕CrO3 solution were studied by using the dynamic etch mask technique. For the solution with HCl∕HF∕CrO3 volume ratio of x: 0.5: 1, the etching selectivity decreases from 42.4 to 1.5 for In0.53Ga0.47As∕In0.72Ga0.28As0.6P0.4 with HCl∕CrO3 volume ratio x increasing from 0 to 1.0. The selective etching was experimentally applied to the fabrication of vertical taper structures with angles ranging from 1.35° to 33.7° on the In0.72Ga0.28As0.6P0.4 epitaxial layer, and surface roughness of the etched taper was & lt;1.6nm. The etching behavior can be explained in a combined electroless and chemical etching mechanism.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2005
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
797726-8
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