GLORIA

GEOMAR Library Ocean Research Information Access

X

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Online Resource  (313)
  • AIP Publishing  (313)
  • 2020-2024  (313)
Material
  • Online Resource  (313)
Publisher
  • AIP Publishing  (313)
Person/Organisation
Language
Years
  • 2020-2024  (313)
Year
FID
Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 120, No. 5 ( 2022-01-31)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 120, No. 5 ( 2022-01-31)
    Abstract: In this work, high-performance millimeter-wave AlGaN/GaN structures for high-electron-mobility transistors (HEMTs) are presented using a Si-rich SiN passivation layer. The analysis of transient and x-ray photoelectron spectroscopy measurements revealed that the presence of the Si-rich SiN layer leads to a decrease in the deep-level surface traps by mitigating the formation of Ga–O bonds. This results in a suppressed current collapse from 11% to 5% as well as a decreased knee voltage (Vknee). The current gain cutoff frequency and the maximum oscillation frequency of the devices with the Si-rich SiN layer exhibit the values of 74 and 140 GHz, respectively. Moreover, load-pull measurements at 30 GHz show that the devices containing the Si-rich SiN deliver excellent output power density of 8.7 W/mm at Vds = 28 V and high power-added efficiency up to 48% at Vds = 10 V. The enhanced power performance of HEMTs using Si-rich SiN interlayer passivation is attributed to the reduced Vknee, the suppressed current collapse, and the improved drain current.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0080120
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 2
    Online Resource
    Online Resource
    Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 121, No. 7 ( 2022-08-15)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 121, No. 7 ( 2022-08-15)
    Abstract: In this work, a high linearity AlGaN/GaN HEMT integrated dual threshold coupling (DT) technology and Schottky–Ohmic drain (SOD) were fabricated and analyzed. Since the architecture of DT synthesized planar- and recess-HEMT periodically along the gate width, SOD alleviated the peak electric field (E-field) around the gate region and the peak transconductance (Gm-max) of 248 mS/mm with the associated transconductance plateau of ∼4.0 V at Vds = 28 V was obtained, which is evidently flatter than that of HEMT without the SOD structure. Attributed to the improved Gm linearity at high E-field, the DT-SOD HEMT exhibits the predicted linearity figure of merit of 5–13 dB when biased at class AB operation, which is ∼10 dB higher than that of DT-HEMT. Moreover, the fabricated device yields a nearly constant fT/fmax of 47/118 GHz over a wide gate voltage, and load-pull measurements at 30 GHz reveal that these devices deliver output power density (Pout) of 7.8 W/mm with the associated 1-dB compression point (P1dB) of 28.5 dBm at Vds = 28 V. The experimental results indicate that the employment of DT technology and SOD structure is an attractive approach to enhance the linearity at high E-field for millimeter wave devices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0096542
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 3
    Online Resource
    Online Resource
    Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 120, No. 10 ( 2022-03-07)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 120, No. 10 ( 2022-03-07)
    Abstract: In this work, ultrathin barrier (∼6 nm) AlGaN/GaN high-electron-mobility transistors (HEMTs) with in situ SiN gate dielectric and slant-field plate (SFP) T-gates were fabricated and analyzed. Since the proposed scheme of gate dielectric and SFP effectively suppresses the gate leakage and alleviates the peak electric field (E-field) around gate region, the maximum breakdown voltage (VBK) was improved to 92 V, which is 54 V higher than that of the conventional device. The fabricated ultrathin AlGaN/GaN HEMT with 60-nm SFP-T-gate exhibited the peak fT of 177 GHz and peak fmax of 393 GHz, yielding high figure-of-merits of fT · VBK = 16 THz V and fmax·VBK = 36 THz V. Moreover, load-pull measurements at 30 GHz reveal that these devices deliver output power density (Pout) of 4.6 W/mm at Vds = 20 V and high power-added efficiency up to 52.5% at Vds = 10 V. Essentially, the experimental results indicate that the employment of SFP and in situ SiN gate dielectric is an attractive approach to balance the breakdown and speed for millimeter wave devices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0080320
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 4
    Online Resource
    Online Resource
    Observation of an abnormally large bandgap in monolayer 1T′-WS2 grown on SrTiO3(001)
    AIP Publishing ; 2023
    In:  Applied Physics Letters Vol. 123, No. 12 ( 2023-09-18)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 123, No. 12 ( 2023-09-18)
    Abstract: The 1T′ structural phase of monolayer transition metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te) has attracted broad interest because of an exotic quantum spin Hall insulator state. Among them, the investigation on the electronic structures of the 1T′-WS2 monolayer is still lacking due to the difficulty in obtaining the 1T′-WS2 as a metastable phase. Here, we report the growth of 1T′ phase WS2 monolayer on the SrTiO3 (001) substrate using molecular beam epitaxy. Surprisingly, a large bandgap of 0.65 eV is revealed by angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy, which is abnormally larger than the theoretical expectance. Moreover, an additional near-flatband emerges in the grown monolayer 1T′-WS2. The abnormally large bandgap and the emerging near-flatband are suggested to be the effect of interfacial interactions. Our findings provide important information about electronic structures and the interfacial effect of the epitaxial 1T′-WS2 monolayer on the SrTiO3(001) substrate and would stimulate future theoretical and experimental research on the 1T′-MX2 family.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0153787
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 5
    Online Resource
    Online Resource
    Laser repointing scheme for octahedral spherical hohlraum s on the SGIII laser facility
    AIP Publishing ; 2023
    In:  Physics of Plasmas Vol. 30, No. 4 ( 2023-04-01)
    Details
    In: Physics of Plasmas, AIP Publishing, Vol. 30, No. 4 ( 2023-04-01)
    Abstract: The novel octahedral spherical hohlraum can provide an ideal and practical approach for the next generation of laser systems to support both direct and indirect drive to achieve predictable and reproducible fusion gain via multiple schemes. To demonstrate its advantage in a naturally high symmetry at a cylindrically configured laser facility, it requires to repoint the laser beams to approach as close as possible the ideal octahedral beam configuration with an injection angle (the angle between a beam and the normal direction of its laser entrance hole (LEH)) ranging from 50° to 60°. We report our investigation and experiment on the optimum repointing scheme at the SGIII facility, which uses 32 beams, with 8 beams entering each polar LEH at 49.5° and 55°, and 4 beams entering each equatorial LEH at 61.5° and 62.1°. It contains residual imbalance between the polar and equatorial beams, leading to an asymmetry dominated by the spherical harmonic Y20 mode, which can be remarkably reduced by the stronger backscatters of equatorial beams. Our experiment demonstrated the feasibility of the 32-beam optimum repointing scheme and generation of 175 eV under 86 kJ inside a 2.4-mm-radius octahedral hohlraum with 0.7-mm-radius LEHs, which provided a strong support for the later experiment on proof-of-concept of octahedral spherical hohlraum [Lan et al., Phys. Rev. Lett. 127, 245001 (2021)]. 2D simulations on LEH closure agree well with the observations. This work opens a novel way of realization of a quasi-spherical irradiation at a cylindrically configured laser facility without supplementary symmetry control.
    Type of Medium: Online Resource
    ISSN: 1070-664X , 1089-7674
    URL: Article
    DOI: 10.1063/5.0133806
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 1472746-8
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 6
    Online Resource
    Online Resource
    Single-spin scanning magnetic microscopy with radial basis function reconstruction algorithm
    AIP Publishing ; 2020
    In:  Applied Physics Letters Vol. 116, No. 18 ( 2020-05-04)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 116, No. 18 ( 2020-05-04)
    Abstract: Exotic magnetic structures, such as magnetic skyrmions and domain walls, are becoming more important in nitrogen-vacancy center scanning magnetometry. However, a systematic imaging approach to mapping stray fields with fluctuations of several milliteslas generated by such structures is not yet available. Here, we present a scheme to image a millitesla magnetic field by tracking the magnetic resonance frequency, which can record multiple contour lines for a magnetic field. The radial basis function algorithm is employed to reconstruct the magnetic field from the contour lines. Simulations with shot noise quantitatively confirm the high quality of the reconstruction algorithm. The method was validated by imaging the stray field of a frustrated magnet. Our scheme had a maximum detectable magnetic field gradient of 0.86 mT per pixel, which enables the efficient imaging of millitesla magnetic fields.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0006024
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 7
    Online Resource
    Online Resource
    DeePMD-kit v2: A software package for deep potential models
    AIP Publishing ; 2023
    In:  The Journal of Chemical Physics Vol. 159, No. 5 ( 2023-08-07)
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 159, No. 5 ( 2023-08-07)
    Abstract: DeePMD-kit is a powerful open-source software package that facilitates molecular dynamics simulations using machine learning potentials known as Deep Potential (DP) models. This package, which was released in 2017, has been widely used in the fields of physics, chemistry, biology, and material science for studying atomistic systems. The current version of DeePMD-kit offers numerous advanced features, such as DeepPot-SE, attention-based and hybrid descriptors, the ability to fit tensile properties, type embedding, model deviation, DP-range correction, DP long range, graphics processing unit support for customized operators, model compression, non-von Neumann molecular dynamics, and improved usability, including documentation, compiled binary packages, graphical user interfaces, and application programming interfaces. This article presents an overview of the current major version of the DeePMD-kit package, highlighting its features and technical details. Additionally, this article presents a comprehensive procedure for conducting molecular dynamics as a representative application, benchmarks the accuracy and efficiency of different models, and discusses ongoing developments.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/5.0155600
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 8
    Online Resource
    Online Resource
    Ab initio calculated dynamic structural factors and optical properties of beryllium along the Hugoniot
    AIP Publishing ; 2023
    In:  AIP Advances Vol. 13, No. 8 ( 2023-08-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 13, No. 8 ( 2023-08-01)
    Abstract: Beryllium is an ablator material used in inertial-confinement fusion and hypervelocity impact studies. The thermoelastic properties, structural factors, and optical properties of beryllium are important in these studies. In this paper, the static structural factors, ion–ion dynamic structural factors, adiabatic velocity, and optical properties of beryllium along the Hugoniot were calculated by ab initio simulations. The static structural factors show that beryllium atoms were randomly distributed. The dynamic structural factors extracted the dispersion relation for collective excitation via the scattering function. By collecting the peak position of the dynamic structural factors, the dispersion relation and adiabatic sound velocity were derived by definition. Using the calculated equation of state, the thermoelastic properties and adiabatic sound velocity have been derived. The two calculated methods for adiabatic sound velocity were verified to be equivalent.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0153547
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 2583909-3
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 9
    Online Resource
    Online Resource
    Three-dimensional imaging by compressed sensing based dual-frequency laser phase ranging
    AIP Publishing ; 2023
    In:  APL Photonics Vol. 8, No. 7 ( 2023-07-01)
    Details
    In: APL Photonics, AIP Publishing, Vol. 8, No. 7 ( 2023-07-01)
    Abstract: Scanless three-dimensional (3D) imaging technology has received extensive attention in recent years due to its rapid detection and system reliability. Compressed sensing imaging technology provides a new solution for the realization of scan-free 3D imaging. In this paper, a 3D imaging method based on dual-frequency laser phase ranging based on compressed sensing technology is introduced and realized. Using the combination of dual-frequency laser phase ranging and compressed sensing theory, two-dimensional range reconstruction from the time-domain light intensity signal collected by a single-point detector is performed. Aiming at the spatial sparsity of the target scene, this technology uses the compressed sensing algorithm to solve the phase information of the two-dimensional spatial distribution contained in the time domain signal so as to invert the 3D image information of the target scene and realize the effect of scanning-free 3D imaging. First, the feasibility of the system is verified by simulations, and the imaging effects of different reconstruction algorithms on different terrains are compared. Second, a non-scanning 3D imaging experimental platform is designed and built. Finally, the 3D images of multiple objects with 32 × 32 resolution are successfully reconstructed through experiments with a compression ratio of 0.25. The ranging accuracy of this system is 0.05 m. This work is promising for applications in multiple objects’ fast detections.
    Type of Medium: Online Resource
    ISSN: 2378-0967
    URL: Article
    DOI: 10.1063/5.0152561
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 2857268-3
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 10
    Online Resource
    Online Resource
    The effect of single-doping engineering on ferroelectric properties of α-In2Se2X: A density functional theory study
    AIP Publishing ; 2023
    In:  Journal of Applied Physics Vol. 134, No. 1 ( 2023-07-07)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 134, No. 1 ( 2023-07-07)
    Abstract: Tailoring the specific properties to practical applications by structural modification is of vital importance for the envisioned development of two-dimensional ferroelectric materials. Herein, a comprehensive investigation on the effects of single doping on the ferroelectric properties and electronic transport in a monolayer of α-In2Se3 was carried out via the combination of first-principles density functional theory calculations and electron–phonon coupling simulations. Our results show that single-doping in In2Se3 can reduce effective mass of carriers and thereby enhance the high carrier mobility potential of the material. Moreover, the ferroelectric phonon mode in single-doped In2Se2X features a lower scattering rate, associating with the single-doping atom, and indicates reduced hindrance to carrier transport during ferroelectric switching. Compared to pristine In2Se3, the obtained smaller ferroelectric barriers ( & lt;1 eV) of single-doped ones promote more promising ferroelectricity from the analysis of the ferroelectric soft mode. Interestingly, the observed variations in ferroelectric behaviors resulting from doping of different elements highlight the significance of single-doping in modifying the ferroelectric properties of monolayers. Furthermore, strain engineering results reveal that single doping obviously affects the dependence of gap on strains: linear relationship for doping ones and nonlinearity for pristine one. Our study provides valuable insights into achieving higher carrier mobility in these critical materials.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/5.0156566
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...