In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 924 ( 2018-6), p. 76-79
Abstract:
In this work we report the latest epitaxial growth of 150 mm 4H-SiC on 4° off-axis substrates by a commercial hot-wall reactor. A statistical analysis of more than 300 runs with an epi thickness range of 6μm~15μm shows that the average uniformities of the thickness and the doping concentration are 1.34% (sigma/mean) and 3.90% (sigma/mean), respectively, and the average 2 mm x 2 mm projected device yield is 97.79%. The growths of ~60 μm-thick 150 mm 4H-SiC epitaxial layers have also been carried out. The repeatability of this system for thick epitaxial layer growth has been verified, showing a run-to-run uniformity similar to that of the thin wafers. These results of 150 mm 4H-SiC epitaxial growths indicate that this comercial hot-wall reactor has the potential for mass production of large diameter 4H-SiC epitaxial wafers.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.924
DOI:
10.4028/www.scientific.net/MSF.924.76
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2018
detail.hit.zdb_id:
2047372-2
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