In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. S1 ( 2000-01-01), p. 198-
Abstract:
Epitaxial layers of CuGaSe 2 , CuAlSe 2 and CuInSe 2 have been successfully grown on the GaAs(100) substrate by means of metalorganic molecular beam epitaxy (MOMBE). Cyclopentadienylcoppertriethylphosphine (CpCuTEP), triethygallium (TEGa) , triisobuthylalminium (TIBAl), triethylindium (TEIn) and selenium have been used for precursors of Cu, Ga, Al, In and Se, respectively. Epilayers have been examined by X-ray diffraction, scanning electron microscopy, electron-probe micro analysis, Raman spectroscopy, photoluminescence and photoreflectance. The c -axis -oriented epilayers exhibiting good optical properties have been grown for both CuGaSe 2 and CuInSe 2 . In spite of the poor reproducibility of the MOMBE growth of CuAlSe 2 , the epitaxial layer exhibiting the edge-emission at 2.64 eV at 8 K has been grown.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAPS.39S1.198
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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