In:
Applied Physics Letters, AIP Publishing, Vol. 106, No. 8 ( 2015-02-23)
Kurzfassung:
In this letter, we report on the resistive switching originating from the rupture/rejuvenation of single-crystalline Cu filaments in a nitrogen-doped porous carbon-based memristive device Cu/CN0.15/Pt. Cu filaments are confined in conical nanopores in CN0.15 thin films. Dislocations exist in the Cu filaments, resulting in obvious crystal lattice distortions. The Cu/CN0.15/Pt device shows outstanding high temperature retention performance for both ON and OFF states, indicating that it is promising for resistance memory applications. Furthermore, continuous RESET (ON-to-OFF switching) and SET (OFF-to-ON switching) processes could be realized indicating the adaptive learning ability of Cu/CN0.15/Pt, which has potential applications in synaptic devices.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2015
ZDB Id:
211245-0
ZDB Id:
1469436-0
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