In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 821-823 ( 2015-6), p. 851-854
Abstract:
Thick multi-layer 4H-SiC epitaxial growth was investigated for very high-voltage Si-face p-channel insulated gate bipolar transistors (p-IGBTs). The multi-layer included n + buffer, p + field stop, and thick p - drift layers. Two processes were employed to enhance the carrier lifetime of the p - drift layer: carbon ion implantation/annealing and hydrogen annealing, and the enhanced carrier lifetime was confirmed by the open-circuit voltage decay measurement. Using the grown thick multi-layer 4H-SiC, simple pin diodes were fabricated instead of p-IGBTs to demonstrate efficient conductivity modulation in the thick p - drift layer. While the on-state voltage was high at room temperature, it decreased significantly at elevated temperatures, and attained 3.5 V at 100 A/cm 2 at 200°C for the diode with the carrier lifetime enhancement processes, indicating sufficient conductivity modulation.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.821-823
DOI:
10.4028/www.scientific.net/MSF.821-823.851
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2015
detail.hit.zdb_id:
2047372-2
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