In:
Science and Technology Development Journal, Viet Nam National University Ho Chi Minh City, Vol. 16, No. 1 ( 2013-03-31), p. 81-85
Kurzfassung:
We investigated resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V – 0.6 V). Our results figured out that the Ag/ZnO/Ti/Glass structure is a candidate structure for nonvolatile data storage applications.
Materialart:
Online-Ressource
ISSN:
1859-0128
,
1859-0128
DOI:
10.32508/stdj.v16i1.1422
Sprache:
Unbekannt
Verlag:
Viet Nam National University Ho Chi Minh City
Publikationsdatum:
2013
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