In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 778-780 ( 2014-2), p. 583-586
Kurzfassung:
In this work, we investigate the impact of Al-implantation into n-MOSFET channel regions together with its p-doping concentration upon the mobility limiting scattering mechanisms in the channel. For this purpose, a study of the interface trap density, interface trapped charge density, field-effect mobility, and Hall mobility is carried out for normally-off n-MOSFETs with different doping profiles and concentrations in the channel region. The trend of the field-effect and the Hall mobility as well as the differences thereof will be discussed. Based on the determined mobilities in the range from 11.9 cm 2 /Vs to 92.4 cm 2 /Vs, it will be shown that for p-doping concentrations above 5·10 16 cm -3 Coulomb scattering is the dominant scattering mechanism for both, low- and high-field mobility. In contrast, for p-doping concentrations below 5·10 16 , cm -3 further scattering mechanisms will be considered that may account for the observed mobility trend at high electric fields.
Materialart:
Online-Ressource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.778-780
DOI:
10.4028/www.scientific.net/MSF.778-780.583
Sprache:
Unbekannt
Verlag:
Trans Tech Publications, Ltd.
Publikationsdatum:
2014
ZDB Id:
2047372-2
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