In:
Materials Science and Technology, SAGE Publications
Abstract:
The present work outlines the synthesis of e-beam deposited (Sn 2 Sb 2 S 5 )GO:FTO thin film. The surface and physicochemical characterization of the thinfilm was done through X-ray diffraction (XRD), X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive X-ray and UV-visible spectrophotometry. An orthorhombic phased Sn 2 Sb 2 S 5 -GO was confirmed by XRD with crystallite size of 16.9 nm. SEM morphology revealed homogenous distribution of grains and sheet-like structure of graphene oxide (GO) and a direct band gap of 2.9 eV. Moreover, electrical investigation presented (Sn 2 Sb 2 S 5 )GO:FTO as an excellent electrode material with 303 F g −1 specific capacitance. The photocatalytic degradation rates by the thinfilm for methyl red dye, pesticide and phenol were 70%, 94% and 54%. The dynamic properties of the investigated film present it as a propitious material for opto-electrical and remediation devices.
Type of Medium:
Online Resource
ISSN:
0267-0836
,
1743-2847
DOI:
10.1177/02670836241231166
Language:
English
Publisher:
SAGE Publications
Publication Date:
2024
detail.hit.zdb_id:
2037367-3
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