Note: Front Cover -- Defects in Silicon -- Copyright Page -- Table of Contents -- Preface -- Chapter 1. Status and future of silicon crystal growth -- 1. Introduction -- 2. Growth techniques for silicon crystals -- 3. CZ silicon growth -- 4. FZ silicon growth -- 5. Segregation of impurities -- 6. Melt flows -- 7. Impurity striations -- 8. Macroscopic impurity distribution -- 9. Altering the melt flows -- 10. Future aspects -- References -- Chapter 2. Microscopic aspects of oxygen precipitation in silicon -- 1. Introduction -- 2. Current status -- 3. Thermodynamic and kinetic model [7] -- 4. Applications of the preceding model -- Chapter 3. Hydrogen in silicon: state, reactivity and evolution after ion implantation -- 1. Introduction -- 2. Passivation of interface traps -- 3. Passivation of group III acceptors -- 4. High fluence hydrogen implantation -- 5. Conclusions -- References -- Chapter 4. Pairing of acceptors with interstitial donors in silicon and germanium -- 1. Introduction -- 2. Experimental details -- 3.Results and discussion -- 4. Conclusions -- Acknowledgments -- References -- Chapter 5. Hydrogen passivation and thermal reactivation of zinc double acceptors in silicon -- 1. Introduction -- 2. Experimental details -- 3. Zinc-related levels -- 4. Thermal stability -- 5. Hydrogen passivation -- 6. Reactivation -- 7. Summary -- References -- Capter 6. A Hydrogen-Carbo n Relate d Deep Donor in Crystalline n-Si:C -- 1. Introduction -- 2. Sample preparation and characterization -- 3. DLTS measurements -- 4. The dissociation behavior of the hydrogen-carbon related defect -- 5. Discussion -- 6. Conclusion -- Acknowledgment -- References -- Chapter 7. Radiative recombination channels due to hydrogen in crystalline silicon -- 1. Introduction -- 2. Experimental details -- 3 . Experimental data -- 4. Discussion -- Acknowledgments -- References. , Chapter 8. Defects created by hydrogen implantation into silicon -- 1. Introduction -- 2. Experimental details -- 3. Results -- 4. Conclusions -- Acknowledgments -- References -- Chapter 9. Hydrogenation of shallow and deep levels in silicon -- 1. Introduction -- 2. Experiment -- 3 . Results and discussion -- 4. Conclusions -- References -- Chapter 10. Hydrogen-related vibrations in crystalline silicon -- 1. Introduction -- 2. Calculation method -- 3. Calculation results -- 4. Discussion -- Acknowledgments -- References -- Chapter 11. Transition metals in silicon and their gettering behaviour -- 1. Introduction -- 2. The properties of transition metals in silicon -- 3. Gettering of transition metals -- References -- Chapter 12. Donor formation in silicon owing to ion implantation of the rare earth metal erbium -- 1. Introduction -- 2. Sample preparation -- 3 .Capacitance-voltage measurements -- 4. DLTS measurements -- 5. Discussion -- Acknowledgments -- References -- Chapter 13. 1.54 μm photoluminescence of erbium-implanted silicon -- 1. Introduction -- 2. Experimental details -- 3. Conclusions -- References -- Chapter 14. Fast-diffusing defects induced by copper in silicon -- 1. Introduction -- 2. Experimental details -- 3. Chemomechanically polished samples -- 4. Copper-diffused samples -- 5. Discussion -- Acknowledgments -- References -- Chapter 15. Quenched-in, fast-diffusing defects in silicon studied by the perturbed angular correlation method -- 1. Introduction -- 2. Experiment -- 3. Results -- 4. Discussion -- Acknowledgment -- References -- Chapter 16. Recent developments in ion implantation in silicon -- 1. Introduction -- 2. Pre-amorphized and annealed layers -- 3. Ion beam synthesis -- References -- Chapter 17. A study of carbon-implanted silicon for light-emittin g diode fabrication -- 1. Introduction -- 2. Experimental details. , 3. Depth distribution and damage -- 4. Substitutionality and precipitation -- 5. Strain compensation: isovalent solid solutions -- Acknowledgments -- References -- Chapter 18. Role of point defects in the transient diffusion and clustering of implanted boron in silicon -- 1. Interactions between boron atoms and poin tdefects -- 2. Application to transient annealing -- 3. A test of alternative models: spatial vs.concentration dependence -- 4. Conclusions -- References -- Chapter 19. The effect of phosphorus background concentration on the diffusion of tin , arsenic and antimony in silicon -- 1. Introduction -- 2. Experimental details -- 3. Results and discussion -- Acknowledgments -- References -- Chapter 20. Heavy metal contamination during integrated-circuit processing : measurements of contamination level and internal gettering efficiency by surface photovoltage -- 1. Introduction -- 2. Surface photovoltage measurements -- 3.Effect of heavy metals on generation andelectric activity of crystallographic defects -- 4. Effect of heavy metal contamination oncircuit yield -- 5. Efficiency of internal gettering -- 6. Sources of heavy metals -- 7. Conclusion and summary -- References -- Chapter 21. Electronic behaviour of decorated stacking faults in silicon -- 1. Introduction -- 2. Experimental details -- 3. Photoluminescence measurements -- 4. DLTS results -- 5. Discussion -- 6. Conclusions -- Acknowledgments -- References -- Chapter 22. Activation and gettering of intrinsic metallic impurities during rapid thermal processing -- 1. Introduction -- 2. Experimental procedure -- 3. Results and discussion -- 4. Conclusion -- Acknowledgments -- References -- Chapter 23. Gold diffusion in silicon: enhanced substitutional gold formation by rhodium doping -- 1. Introduction -- 2. Experimental details -- 3. Results and interpretation. , 4. Discussion and conclusion -- Acknowledgments -- References -- Chapter 24. Effect of deformation-induced defects on the Fermi level position at recombination centers in n-Si -- 1. Introduction -- 2. Sample preparation -- 3. Experimental details and results -- 4. Discussion -- References -- Chapter 25. Precipitation at grain boundaries in silicon -- 1. Introduction -- 2. Experimental details -- 3. Electrical properties -- 4. TEM observations -- 5. Conclusions -- References -- Chapter 26. Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon -- 1. Introduction -- 2. Experimental procedure -- 3. Results -- 4. Discussion -- 5. Conclusions -- Acknowledgments -- References -- Chapter 27. Modelling of recombination activity and passivation by hydrogen of dislocations in silicon wafers -- 1. Introduction and model -- 2. Experimental details -- 3. Results and discussion -- 4. Conclusions -- Acknowledgments -- References -- Chapter 28. Formation of buried CoSi 2 layers by ion implantation, studied by Mossbauer spectroscopy and Rutherford backscattering spectroscopy -- 1. Introduction -- 2. Experimental details -- 3. Results -- 4. Conclusions -- Acknowledgments -- References -- Chapter 29. Hall effect spectroscopy of thermal donors in silicon films synthesized by oxygen implantation -- 1. Introduction -- 2. Experiment -- 3. Interpretation and discussion -- 4. Conclusion -- Acknowledgments -- References -- Chapter 30. Perturbed angular correlation spectroscopy of acceptor-donor pairs in silicon, germanium and GaAs -- 1. Introduction -- 2. Experimental details -- 3. Results -- Acknowledgments -- References -- Chapter 31. Optical absorption by platinum in crystallin silicon -- 1. Introduction -- 2. Experimental details -- 3. General appearance of the triplet -- 4. Uniaxial stress data -- 5. Discussion -- Acknowledgments. , References -- Chapter 32. Surface characterization of high-dose Sb + implanted rapid thermal annealed monocrystalline silicon -- 1. Introduction -- 2. Experimental techniques -- 3. Results -- 4. Discussion and synopsis -- References -- Chapter 33. Chromium diffusivity in boron-doped silicon: reassessmen to f the activation energy from low tempera ture measurements -- 1. Introduction -- 2. Cr- B pairing reaction -- 3. Experimental details -- 4. Results -- 5. Discussion and conclusion -- Acknowledgment -- References -- Chapter 34. Regrowth of indium-implanted (100), (110 ) and (111) silicon crystals studied with Rutherford backscattering and perturbed angular correlation techniques -- 1. Introduction -- 2. Experimental details -- 3 . Results -- 4. Conclusions -- Acknowledgments -- References -- Chapter 35. Substrate-damage-free laser recrystallization of polycrystalline silicon -- 1. Introduction -- 2. Upper layer -- 3. Substrate damage -- 4. Results -- 5. Conclusions -- Acknowledgments -- References -- Chapter 36. A photoluminescence study of zinc-implanted silicon -- 1. Introduction -- 2. Experimental details -- 3. Results -- 4. Discussion -- 5. Summary -- Acknowledgments -- References -- Chapter 37. Kinetics of silicon amorphization by N + implantation: dose rate and substrate temperature effects -- 1. Introduction -- 2. Experimental details -- 3. Results and discussion -- References -- Chapter 38. Defects and solidification front morphologies in lamp zone-melting-recrystallized silicon-on-insulator films -- 1. Introduction -- 2. Experimental details -- 3. Solidification fronts -- 4. Defects -- 5. Preheating variation -- 6. Discussion -- 7. Conclusions -- Acknowledgments -- References -- Chapter 39. Strain compensation effects on the annealing of Ge +-B +-implanted silicon -- 1. Introduction -- 2. Experimental details -- 3. Results. , 4. Conclusions.

Note: Front Cover -- Nucleation and Atmospheric Aerosols 1996 -- Copyright Page -- Contents -- Preface -- Part 1: Nucleation -- Chapter 1. Nucleation of single component supersaturated vapors -- Chapter 2. Ternary nucleation of water- n-nonane - n-butanol: Does the amphiphile work as surfactant in vapor phase nucleation? -- Chapter 3. Density functional theory for binary nucleation -- Chapter 4. Monte Carlo simulations of small H2SO4-H2O clusters -- Chapter 5. Monte Carlo simulation of homogeneous binary nucleation: Toward a theory of sulfuric acid-water system -- Chapter 6. Ion nucleation and growth of sulfuric acid-water aerosol particles: Application of general dynamic equation -- Chapter 7. Experimental evaluation of ion-induced nucleation in nanometer-sized particle formation from SO2/H2O/N2 mixtures by a-ray radiolysis -- Chapter 8. A new technique for ion nucleation using resonance ionization within supersaturated vapors -- Chapter 9. Experimental study of ion-induced nucleation of volatile organic compounds by radon decay -- Chapter 10. Cluster ion mobility spectra of alcohols -- Chapter 11. Joint experiments on homogeneous nucleation. Measurements of nucleation rates in supersaturated n-pentanol vapor -- Chapter 12. Homogeneous nucleation rate measurements in 1-pentanol vapour with helium as a buffer gas -- Chapter 13. The homogeneous nucleation of cesium vapor -- Chapter 14. Recent experiments concerning the role of non-condensable background gases on nucleation -- Chapter 15. Pressure dependence of nucleation rates in binary systems -- Chapter 16. Isomorphisms between nucleation theory and microemulsion theory -- Chapter 17. Statistical-mechanical basis for the 1/S correction to classical homogeneous nucleation theory -- Chapter 18. Scaling properties of the critical nucleus in classical and density functional nucleation theories. , Chapter 19. Thermodynamics and phenomenological nucleation theories -- Chapter 20. A virial/Fisher model of cluster populations at the critical point -- Chapter 21. The binary nucleation of n-octane and iso-octane -- Chapter 22. Homogeneous nucleation rates in binary vapor system Water-n-butanol from pex-tube experiments -- Chapter 23. Transient behavior and time lags in binary nucleation -- Chapter 24. Thermocynamic and kinetic consistency of calculated binary nucleation rates -- Chapter 25. Vapor nucleation rate surface topology of the soluble and partially soluble binary mixtures -- Chapter 26. Homogeneous nucleation of silicon: Effects of the properties and kinetics of small structured clusters -- Chapter 27. Binary contribution to nucleation rates -- Chapter 28. Nucleation in ethanol vapor: The effect of dimer formation -- Chapter 29. A model for the interpretation of cluster formation in chemical reactions -- Chapter 30. Time-dependent nucleation in very rapid non-isothermal processes -- Chapter 31. New Microscopic Approach to Condensation Problems -- Chapter 32. Determination of free energy and rate of nucleation of N2O4 clusters (Nucleation of rocket fuel in space) -- Chapter 33. Heterogeneous embryo radius on spherical substrate -- Chapter 34.Nucleation mechanism in vapour phase epitaxial growth of binary, ternary and quaternary semiconductors -- Chapter 35. Multicomponent nucleation on aerosol particles-containing both soluble and insoluble substances -- Chapter 36. Monte Carlo simulation on the water microcluster in the detailed balance -- Chapter 37. Nucleation kinetics in gaseous system with big gradients of thermodynamic variables -- Chapter 38. Photonucleation kinetics -- Chapter 39. Energy transfer and fluctuations of nucleation rate -- Chapter 40. Structure of a metallic microcluster of single and binary-compounds. , Chapter 41. Binary photoinduced nucleation: Transition from the molecular condensation nuclei mechanism to the kinetically controlled binary collision stage (and then to the thermodynamically described behaviour) -- Chapter 42. Nucleation of marine aerosols: A laboratory observation -- Chapter 43. A time-dependent solution for the cluster concentrations in homogeneous nucleation -- Chapter 44. Theory of multicomponent nucleation: Effective medium approach -- Chapter 45. Aerosol formation induced by W(CO) 6 photolysis in air.Experiment and numerical modelling -- Chapter 46. The flow diffusion nucleation chamber: A quantitative instrument for nucleation research -- Chapter 47. How does the wall of the diffusion cloud chamber affect performance -- Chapter 48. A critical line limitation of embryos Laplass's pressure -- Chapter 49. Nucleation in the presence of air ions and aerosol particles -- Chapter 50. Molecular theory of ultramicro clusters and nucleation. I. The surface free energy -- Chapter 51. Nucleation from atmospheric fluctuations -- Chapter 52. A new semiphenomenological model for surface tension size dependence -- Chapter 53. Nucleation controlled growth of aerosol particles -- Chapter 54. Nucleation and condensation rate measurement by condensation wave -- Chapter 55. Phase transition of condensate formed by heterogeneous nucleation of condensable vapors onto a cold substrate -- Chapter 56. Kinetic theory of condensation on identical heterogeneous centers -- Chapter 57. Condensation on the spectrum of heterogeneous centers with different activities -- Chapter 58. Modeling of vapour-liquid transient nucleation in binary system -- Chapter 59. Motion pictures of nucleation and growth of solid phases in supercooled molecular clusters -- Chapter 60. Computer simulation of prenucleation cluster using percolation theory. , Chapter 61. Biologial application of nucleation theories - I -- Nucleation and growth of lung cancer -- Chapter 62. Effect of supersaturation, temperature and total pressure on the homogeneous nucleation of n-pentanol -- Chapter 63. Effect of dimensionality on the temperature dependence of rate of nucleation -- Chapter 64. Number of clusters formed in nucleation-growth processes -- Part II: Stratospheric Aerosols and Ice Nucleation -- Chapter 65. The role of particulate matter in ozone photochemistry (stratosphere and troposphere) -- Chapter 66. Ice nucleation…A review -- Chapter 67. Formation mechanisms of polar stratospheric clouds -- Chapter 68. Aerosol production caused by civil air traffic: An overview of near-field interactions -- Chapter 69. Particle formation in jet aircraft exhausts and contrails for different sulfur containing fuels -- Chapter 70. Latitudinal and temporal variations of the climatic response to enhanced stratospheric aerosol concentrations from the Mt.Pinatubo eruption -- Chapter 71. Dynamics of development and relaxation of stratospheric aerosol layer after the Mt.Pinatubo eruption based on the observations at Siberian Lidar Station -- Chapter 72. Kinetics of homogeneous nucleation in large molecular clusters -- Chapter 73. Laboratory studies of sulfate aerosols at low temperature -- Chapter 74. Crystallization kinetics of nitric acid dihydrate aerosols: Implications for polar stratospheric clouds -- Chapter 75. Freezing of binary and ternary solutions of H2SO4,HNO3 and H2O under stratospheric conditions: Nucleation statistics and experiments -- Chapter 76. Influence of adsorbed atomic and molecular ions electric field on ice phase formation in clouds -- Chapter 77. Directed ice nuclei modification by variation of aerosol particles composition. , Chapter 78. A study on the climate change of ice nuclei concentration in Beijing of 1963 and 1995 -- Chapter 79. On vertical change of concentration of aerosol particles and ice nuclei in atmosphere -- Chapter 80. Study of effect of electrical charges and electrical fields on ice-forming activity of aerosols -- Chapter 81. A possible impact of stratospheric aerosols over surface mean temperature trends in Cuba -- Chapter 82. A numerical simulation of a contrail -- Chapter 83. Monte Carlo studies of water/ice adsorbed on model AgI: Effects of lattice shift -- Chapter 84. Ice nucleation on sulfuric acid particles -- Chapter 85. Laboratory studies on evaporation ice nuclei -- Chapter 86. Nucleation characteristics of polycrystalline ice crystals -- Chapter 87. 3D-simulation of the formation and the development of stratospheric aerosol -- Chapter 88. Vertical diffusion simulation of Be 7 at midlatitudes -- Chapter 89. Isolating and identifing atmospheric ice-nucleating aerosols: A new technique -- Chapter 90. Intercomparing results of ice nuclei concentration measurements carried out simultaneously using cloud chamber and filter method -- Chapter 91. Does electrostatic charge at cloud tops affect rates of nucleation and sedimentation of ice? -- Chapter 92. Size-dependent stratospheric droplet composition in rapid temperature fluctuations -- Chapter 93. Numerical simulation of freezing of strong electrolyte solution -- Part III: Tropospheric Aerosols -- Chapter 94. Fractal aggregates in the atmosphere -- Chapter 95. Phase transitions in Finnish sauna -- Chapter 96. Water nucleation on aerosol particles containing both soluble and insoluble substances -- Chapter 97. Transport of radioactive materials in convective clouds -- Chapter 98. On the physical, chemical, and toxic properties of highly dispersed atmospheric aerosols. , Chapter 99. Relationship between light scattering coefficient and chemical composition of atmospheric aerosol particles in Hungary.