In:
Applied Physics Letters, AIP Publishing, Vol. 72, No. 23 ( 1998-06-08), p. 3017-3019
Abstract:
In this letter, we report the observation of N-shaped negative-differential-resistance (NDR) characteristics in a SiC/Si heterostructure diode. The typical NDR in this device has a peak-to-valley current ratio (PVCR) of 44 and a high peak current of 4.8 mA at room temperature. A possible model based on the multi-tunneling process was proposed to explain the origin of the NRD in this device. The most attractive feature of this device is its high-temperature NDR characteristics. An obvious NDR with a PVCR of as high as 9 is obtained at 200 °C, indicating that this SiC/Si heterostructure NDR diode is promising for high-temperature electronic applications.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1998
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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