In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 21, No. 4 ( 2003-07-01), p. 1301-1305
Kurzfassung:
Schottky and pn junction diodes with good rectifying characteristics have been prepared based on the polycrystalline SiGe (poly-SiGe) thin film deposited by the ion-beam-sputtering (IBS) technique. Boron and phosphorus diffusion techniques have been used to dope and crystallize as-deposited amorphous SiGe film. Rectification ratios as high as 4000 and 1800 have been achieved in Pt/n-poly-SiGe and Ti/p-poly-SiGe Schottky diodes, respectively, while rectification ratio higher than 1500 and breakdown voltage higher than 200 V have been achieved in poly-SiGe pn junction diodes. Schottky barrier height has been determined to be 0.62 and 0.59 eV for Pt/n-poly-Si0.81Ge0.19 and Ti/p-poly-Si0.81Ge0.19 contacts, respectively, which indicates that the band alignment of poly-SiGe may be substantially different from that of epitaxial SiGe.
Materialart:
Online-Ressource
ISSN:
1071-1023
,
1520-8567
Sprache:
Englisch
Verlag:
American Vacuum Society
Publikationsdatum:
2003
ZDB Id:
3117331-7
ZDB Id:
3117333-0
ZDB Id:
1475429-0
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