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  • American Vacuum Society  (4)
  • English  (4)
  • 1
    Online Resource
    Online Resource
    SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system
    American Vacuum Society ; 2016
    In:  Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Vol. 34, No. 1 ( 2016-01-01)
    Details
    In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 34, No. 1 ( 2016-01-01)
    Abstract: Silicon germanium tin alloys were grown directly on Si substrates using a cold-wall ultrahigh-vacuum chemical vapor deposition system at 300 °C, where commercially available precursors of silane, germane, and stannic chloride were used to grow the epitaxial layers. The crystallinity and growth quality of the SiyGe1−x−ySnx films were investigated through material characterization methods including x-ray diffraction, scanning electron microscopy, energy-dispersive x-ray spectroscopy, and transmission electron microscopy. Rutherford backscattering measurements show that 2%–5% of the Sn and 3%–5% of the Si were successfully incorporated. Investigation of the material growth parameters shows that a flow rate of stannic chloride higher than 1 sccm results in etching of the film, while an increase in the silane flow rate results in amorphous film growth. The photoluminescence study shows clear emission peaks ascribed to direct and indirect bandgap transitions, which are in agreement with theoretical calculations.
    Type of Medium: Online Resource
    ISSN: 2166-2746 , 2166-2754
    URL: Article
    DOI: 10.1116/1.4936892
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2016
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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  • 2
    Online Resource
    Online Resource
    Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon
    American Vacuum Society ; 2014
    In:  Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Vol. 32, No. 6 ( 2014-11-01)
    Details
    In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 32, No. 6 ( 2014-11-01)
    Abstract: Ge1−xSnx thin films with Sn composition up to 7% were epitaxially grown by chemical vapor deposition on silicon. Temperature-dependent photoluminescence was investigated and the peaks corresponding to the direct and indirect transitions were observed in a wavelength range from 1.6 to 2.2 μm. The exact peak positions obtained from Gaussian fitting were fitted with an empirical temperature dependent band-gap equation (Varshni relationship). The separation between direct and indirect peaks was equal to 0.012 eV for GeSn thin film with 7% Sn content at room temperature. This observation indicates that the indirect-to-direct crossover would take place at slightly higher Sn compositions.
    Type of Medium: Online Resource
    ISSN: 2166-2746 , 2166-2754
    URL: Article
    DOI: 10.1116/1.4897917
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2014
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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  • 3
    Online Resource
    Online Resource
    Progress toward silicon-based intersubband lasers
    American Vacuum Society ; 1998
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 16, No. 3 ( 1998-05-01), p. 1525-1528
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 16, No. 3 ( 1998-05-01), p. 1525-1528
    Abstract: Design results are presented for the quantum parallel laser (QPL) at 1–20 μm wavelengths and the cryogenic 4–20 μm quantum cascade laser (QCL). For 1–2 μm lasing, the optimum multiple quantum well heterostructures are Si quantum wells (QWs) confined by wide-gap lattice-matched semiconductor layers, especially the Si/ZnS, Si/BeSeTe, Si/γ–Al2O3, Si/CeO2, and Si/SiOx systems (SiOx is a crystalline suboxide). The electrically pumped 300 K unipolar p-i-p. QPL consists of tightly coupled QWs exhibiting coherent transport of carriers on superlattice (SL) minibands. A good QPL candidate is the symmetrically strained Gen–Sin SL grown on relaxed Si0.5Ge0.5. Local-in-k population inversion is engineered between two valence minibands. Our calculations indicate that the p-i-p QCL is feasible in Ge–Si or in lattice-matched Si0.63Ge0.33C0.04/Si. The oscillator strength fz=0.1 calculated for the 8 ML×8 ML Si/ZnS zone-folded SL is insufficient for 1.1 μm band-to-band lasing; however, the in-plane dispersion of Si QWs in Si/ZnS SLs shows valence subbands that are sufficiently nonparabolic for local-in-k lasing in QPLs and QCLs.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.589979
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1998
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 4
    Online Resource
    Online Resource
    Silicon-based group IV heterostructures for optoelectronic applications
    American Vacuum Society ; 1996
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 14, No. 3 ( 1996-05-01), p. 913-918
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 14, No. 3 ( 1996-05-01), p. 913-918
    Abstract: This article presents an overview of trends and progress in group IV heterostructures for optoelectronics. The outlook is good in electronics because the commercialization of SiGe/Si heterotransitors is proceeding nicely. However, the pace of progress is slower in SiGe/Si photonics. This article covers five innovative topics in an effort to enhance the development of heterostructure photonics: (1) band-gap studies of SiGeC, an alloy that can be lattice matched to Si, (2) direct-band-gap, strained heterostructures of GeSn upon GeSi/Si, (3) silicon-based quantum-well intersubband lasers (ISBLs) including SiGe/Si quantum-cascade, Raman, and inversionless ISBLs, (4) 1.5 μm ISBLs based on Si quantum wells with high barriers, such as heterosystems of Si/ZnS, and Si with SiO2/Si strained superlattice barriers, and (5) low-cost substrates of 3C SiC upon SiO2/Si, a platform for SiC heterodevices and for InGaN/AlGaN heterodevices.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.580414
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1996
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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