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  • AIP Publishing  (26)
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  • English  (26)
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  • 1
    Online Resource
    Online Resource
    Structural characterization of Si m Ge n strained layer superlattices
    AIP Publishing ; 1992
    In:  Journal of Applied Physics Vol. 71, No. 9 ( 1992-05-01), p. 4305-4313
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 71, No. 9 ( 1992-05-01), p. 4305-4313
    Abstract: SimGen strained layer superlattice (SLS) structures were grown by molecular beam epitaxy on GexSi1−x buffer layers on 〈100〉 Si substrates to determine the effects of buffer layer composition, SLS thickness ratio, and superlattice periodicity, on the overall quality of these structures. X-ray diffraction methods were used to determine how closely actual periodicities and compositions met targeted values, and to evaluate the quality of these samples. In most instances the as-grown structures matched the targeted values to within 10%, though in some instances deviations of 20–25% in either the period or composition were observed. The quality of the SLS structures was greatly dependent on the composition of the buffer layer on which it was grown. SimGen SLS structures grown on Si- and Ge-rich buffer layers were of much higher quality than SimGem SLSs grown on Ge0.50Si0.50 layers, but the x-ray rocking curves of the SimGen samples indicated that they were far from perfect and contained moderate levels of defects. These results were confirmed by cross sectional transmission electron microscopy, which showed that the SimGem structures contained significant numbers of dislocations and that the layers were nonuniform in thickness and wavy in appearance. SimGen structures, however, displayed fewer defects but some dislocations and nonparallelism of layers were still observed.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.350812
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1992
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 2
    Online Resource
    Online Resource
    Wet oxidation of GeSi at 700 °C
    AIP Publishing ; 1992
    In:  Journal of Applied Physics Vol. 71, No. 8 ( 1992-04-15), p. 4015-4018
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 71, No. 8 ( 1992-04-15), p. 4015-4018
    Abstract: About 500-nm-thick films of Ge0.36Si0.64 and Ge0.28Si0.72 grown epitaxially on (100)Si have been oxidized at 700 °C in wet ambient. A uniform GexSi1−xO2 oxide layer forms with a smooth interface between it and the unoxidized GexSi1−x layer below. The composition and structure of that layer remains unchanged as monitored by backscattering spectrometry or cross-sectional transmission electronic microscopy. The oxide of both samples grows as square root of oxidation duration. The parabolic rate constant increases with the Ge content and is larger than that for wet oxidation of pure Si at the same temperature. The absence of a regime of linear growth at this relatively low temperature indicates a much enhanced linear rate constant.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.350847
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1992
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    Wetting transitions in symmetrical polymer blends
    AIP Publishing ; 2001
    In:  The Journal of Chemical Physics Vol. 114, No. 9 ( 2001-03-01), p. 4267-4276
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 114, No. 9 ( 2001-03-01), p. 4267-4276
    Abstract: The characteristics of wetting in polymer blends are investigated by a self-consistent-field theory. A symmetrical system is chosen: the interface between two homopolymeric liquids A and B is wetted by a third homopolymer C which is equally insoluble in both liquids. All components have the same molecular weight (NA=NB=NC=N=10 or 100). The emphasis of this study is on the wetting transitions induced by varying the interactions between the components. Cahn’s argument, which predicts complete wetting near the critical temperature of two system components, is verified in this context. We show that it is necessary to consider the effective interaction parameters χACeff=χBCeff to verify Cahn’s argument. Since we vary the solubility of C (given by χAC=χBC) and the thickness of the AB interface (determined by χAB) independently, we have a two-dimensional parameter space. In this parameter space we can distinguish three regimes representing wetting transitions with different characteristics. One of these regimes indeed shows Cahn-type transitions. A key observation is that the wetting transitions near the simultaneous critical point of mixtures A/C and B/C are of a second-order type. A second regime in the parameter space represents wetting transitions which are understood from the high surface tension of the AB interface. In many cases these wetting transitions are also of a second-order type, but become first order when NχAB & gt;8. In the third regime we find what might be called “pseudowetting:” from inspection of the adsorption isotherms it follows that C seems to wet the AB interface, but with increasing amount of C in the system, the wetting layer is suddenly destroyed. The reason for this is clear. Here, the apparent wetting point χACwet is close to χACeff,crit, but χAB & lt;χAC=χBC, the wetting film is unstable. As a result, while at first Cahn’s argument seems to be fulfilled, it eventually fails in this region of the parameter space.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/1.1345498
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 4
    Online Resource
    Online Resource
    Quantized conductance in a split-gate point contact based on a pseudomorphic InGaAs/InP heterostructure
    AIP Publishing ; 1996
    In:  Journal of Applied Physics Vol. 79, No. 2 ( 1996-01-15), p. 871-875
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 79, No. 2 ( 1996-01-15), p. 871-875
    Abstract: In this paper the fabrication and characterization of split-gate point contacts based on a pseudomorphic InGaAs/InP heterostructure with an indium content of 77% in the strained channel layer is described. Steps in the conductance were observed, which are due to quantized conductance through the quasi one-dimensional constriction formed by the split-gates. Deviations from the ideal quantization are studied by applying differing bias voltages on the two fingers forming the point contact. Since the channel layer of our structure consists of a ternary material it is argued that, beside impurity and interface roughness scattering, alloy scattering processes contribute significantly to the observed deviations of the ideal quantized conductance.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.360907
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 5
    Online Resource
    Online Resource
    Geometry relaxation-mediated localization and delocalization of excitons in organic semiconductors: A quantum chemical study
    AIP Publishing ; 2020
    In:  The Journal of Chemical Physics Vol. 153, No. 22 ( 2020-12-14)
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 153, No. 22 ( 2020-12-14)
    Abstract: Photo-induced relaxation processes leading to excimer formations or other traps are in the focus of many investigations of optoelectronic materials because they severely affect the efficiencies of corresponding devices. Such relaxation effects comprise inter-monomer distortions in which the orientations of the monomer change with respect to each other, whereas intra-monomer distortions are variations in the geometry of single monomers. Such distortions are generally neglected in quantum chemical investigations of organic dye aggregates due to the accompanied high computational costs. In the present study, we investigate their relevance using perylene-bisimide dimers and diindenoperylene tetramers as model systems. Our calculations underline the importance of intra-monomer distortions on the shape of the potential energy surfaces as a function of the coupling between the monomers. The latter is shown to depend strongly on the electronic state under consideration. In particular, it differs between the first and second excited state of the aggregate. Additionally, the magnitude of the geometrical relaxation decreases if the exciton is delocalized over an increasing number of monomers. For the interpretation of the vibronic coupling model, pseudo-Jahn–Teller or Marcus theory can be employed. In the first part of this paper, we establish the accuracy of density functional theory-based approaches for the prediction of vibrationally resolved absorption spectra of organic semiconductors. These investigations underline the accuracy of those approaches although shortcomings become obvious as well. These calculations also indicate the strength of intra-monomer relaxation effects.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/5.0028943
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 6
    Online Resource
    Online Resource
    Erratum: “ Ab initio study of the electronic spectrum of C2H2+: Investigation of structure and spectra involving low-lying doublet electronic states” [J. Chem. Phys. 109 , 3086 (1998)]
    AIP Publishing ; 1999
    In:  The Journal of Chemical Physics Vol. 110, No. 17 ( 1999-05-01), p. 8844-8844
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 110, No. 17 ( 1999-05-01), p. 8844-8844
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/1.478994
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 7
    Online Resource
    Online Resource
    Damage and strain in epitaxial Ge x Si1− x films irradiated with Si
    AIP Publishing ; 1993
    In:  Journal of Applied Physics Vol. 74, No. 10 ( 1993-11-15), p. 6039-6045
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 74, No. 10 ( 1993-11-15), p. 6039-6045
    Abstract: The damage and strain induced by irradiation of both relaxed and pseudomorphic GexSi1−x films on Si(100) with 100 keV 28Si ions at room temperature have been studied by MeV 4He channeling spectrometry and x-ray double-crystal diffractometry. The ion energy was chosen to confine the major damage to the films. The results are compared with experiments for room temprature Si irradiation of Si(100) and Ge(100). The maximum relative damage created in low-Ge content films studied here (x=10%, 13%, 15%, 20%, and 22%) is considerably higher than the values obtained by interpolating between the results for relative damage in Si-irradiated single crystal Si and Ge. This, together with other facts, indicates that a relatively small fraction of Ge in Si has a significant stabilizing effect on the retained damage generated by room-temperature irradiation with Si ions. The damage induced by irradiation produces positive perpendicular strain in GexSi1−x, which superimposes on the intrinsic positive perpendicular strain of the pseudomorphic or partially relaxed films. In all of the cases studied here, the induced maximum perpendicular strain and the maximum relative damage initially increase slowly with the dose, but start to rise at an accelerated rate above a threshold value of ∼0.15% and 15%, respectively, until the samples are amorphized. The pre-existing pseudomorphic strain in the GexSi1−x film does not significantly influence the maximum relative damage created by Si ion irradiation for all doses and x values. The relationship between the induced maximum perpendicular strain and the maximum relative damage differs from that found in bulk Si(100) and Ge(100).
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.355219
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 8
    Online Resource
    Online Resource
    On a theoretical model for the Renner–Teller effect in tetra-atomic molecules
    AIP Publishing ; 1996
    In:  The Journal of Chemical Physics Vol. 105, No. 19 ( 1996-11-15), p. 8569-8585
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 105, No. 19 ( 1996-11-15), p. 8569-8585
    Abstract: A model for the ab initio treatment of the Renner–Teller effect in tetra-atomic molecules is elaborated. It is based on the approach developed by Petelin and Kiselev [Int. J. Quantum Chem. 6, 701 (1972)]. Particular attention is paid to Π electronic states. Perturbative formulas are derived for several coupling cases. The model is checked by means of ab initio calculations at various levels of sophistication. Results of computations of various quantities related to the model are presented for the X 2Πu states of B2H+2 and C2H+2. The reliability of the basis assumptions is demonstrated by comparing the results obtained in the framework of the model considered with those of independent ab initio calculations.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/1.472641
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 9
    Online Resource
    Online Resource
    Measurement and theoretical simulation of the HCCO− anion photoelectron spectrum
    AIP Publishing ; 2001
    In:  The Journal of Chemical Physics Vol. 115, No. 4 ( 2001-07-22), p. 1777-1788
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 115, No. 4 ( 2001-07-22), p. 1777-1788
    Abstract: The photoelectron spectrum of HCCO− at the photodetachment wavelength of 355 nm is reported. A theoretical model for the simulation of the photodetachment process is described and the influence of various parameters is discussed. The experimental spectrum is compared with the simulation and an assignment of the spectrum is given.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/1.1378041
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 10
    Online Resource
    Online Resource
    Correlative plasma-surface model for metastable Cr-Al-N: Frenkel pair formation and influence of the stress state on the elastic properties
    AIP Publishing ; 2017
    In:  Journal of Applied Physics Vol. 121, No. 21 ( 2017-06-07)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 121, No. 21 ( 2017-06-07)
    Abstract: Correlatively employing density functional theory and experiments congregated around high power pulsed magnetron sputtering, a plasma-surface model for metastable Cr0.8Al0.2N (space group Fm3¯m) is developed. This plasma-surface model relates plasma energetics with film composition, crystal structure, mass density, stress state, and elastic properties. It is predicted that N Frenkel pairs form during Cr0.8Al0.2N growth due to high-energy ion irradiation, yielding a mass density of 5.69 g cm−3 at room temperature and Young's modulus of 358–130 GPa in the temperature range of 50–700 K for the stress-free state and about 150 GPa larger values for the compressive stress of 4 GPa. Our measurements are consistent with the quantum mechanical predictions within 5% for the mass density and 3% for Young's modulus. The hypothesis of a stress-induced Young's modulus change may at least in part explain the spread in the reported elasticity data ranging from 250 to 420 GPa.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4985172
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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