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  • AIP Publishing  (73)
  • English  (73)
  • 1
    Online Resource
    Online Resource
    BN/ZnO heterojunction diodes with apparently giant ideality factors
    AIP Publishing ; 2009
    In:  Journal of Applied Physics Vol. 106, No. 6 ( 2009-09-15)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 106, No. 6 ( 2009-09-15)
    Abstract: Until now, a common feature of many wide band gap heterojunction diodes is an unexplained large ideality factor n & gt;2. In this context we investigate the diode characteristics of heterojunction diodes consisting of a crystalline semiconductor material such as ZnO covered with a thin semiconducting film of amorphous or disordered material. As thin disordered film we use sp2-bonded turbostratic boron nitride. These heterojunctions exhibit a pronounced rectifying behavior, low saturation current, and low parasitic currents. Moreover, we observe an apparently giant ideality factor reaching values of n & gt;100. As a consequence, the turn-on voltage is around 5–10 V and the I-V curves can be measured for bias voltages between ±80 V without reaching saturation or electrical breakdown. We present a quantitative model for the unusual diode characteristics of these metal-amorphous semiconductor-semiconductor diodes. We demonstrate that the I-V characteristics of the heterojunctions are well described by a serial arrangement of an ideal Schottky diode, a Frenkel–Poole type resistance, and an Ohmic contact resistance, emulating a p-n- or Schottky diode characteristic with giant ideality factor. We propose that heterojunctions exhibiting apparently large ideality factors n⪢2 may possess an interfacial disordered or amorphous layer with Frenkel–Poole conduction properties.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3212987
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2009
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 2
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    Online Resource
    High resolution rotational analysis of the B  3Π– X  3Δ (1,0) band of titanium monoxide
    AIP Publishing ; 1995
    In:  The Journal of Chemical Physics Vol. 102, No. 11 ( 1995-03-15), p. 4375-4381
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 102, No. 11 ( 1995-03-15), p. 4375-4381
    Abstract: The B 3Π–X 3Δ (1,0) band of titanium monoxide has been studied at sub-Doppler resolution (0.002 cm−1) by crossing a beam of TiO molecules with a cw tunable laser beam and by collecting the laser-induced fluorescence. The rotational structure of 42 branches belonging to the 3Π–3Δ transition has been analyzed up to rotational quantum numbers equal to 94. Spectroscopic data have been reduced to a set of 24 molecular constants, using a case (a) effective Hamiltonian. The rotational, spin–orbit and Λ-doubling constants are discussed in terms of the leading configurations which give rise to the X 3Δ and B 3Π electronic states. It is shown that for the B state, existing ab initio calculations are not able to reproduce the second order spin–orbit effect and the Λ doubling effect.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/1.469486
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 3
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    Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
    AIP Publishing ; 2000
    In:  Journal of Applied Physics Vol. 87, No. 5 ( 2000-03-01), p. 2149-2157
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 87, No. 5 ( 2000-03-01), p. 2149-2157
    Abstract: The recovery of structural defects in gallium nitride (GaN) and aluminum nitride (AlN) after implantation of In+111 and Sr+89 in the dose range (0.1–3) 1013 cm−2 and ion energies of 60–400 keV has been investigated as a function of annealing temperature with emission channeling (EC) and perturbed γγ angular correlation spectroscopy. The implanted In and Sr atoms occupied substitutional sites in heavily perturbed surroundings of point defects after room temperature implantation. No amorphization of the lattice structure was observed. The point defects could be partly removed after annealing to 1473 K for 10–30 min. Lattice site occupation of implanted light alkalis, Na+24 in GaN and AlN as well as Li+8 in AlN, were also determined by EC as a function of implantation and annealing temperature. These atoms occupied mainly interstitial sites at room temperature. Lithium diffusion and the occupation of substitutional sites was observed in GaN and AlN at implantation temperatures above 700 K. A lattice site change was also observed for sodium in AlN, but not in GaN after annealing to 1073 K for 10 min.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.372154
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 4
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    Lattice site location of ion-implanted Li8 in Silicon Carbide
    AIP Publishing ; 2002
    In:  Journal of Applied Physics Vol. 91, No. 3 ( 2002-02-01), p. 1046-1052
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 91, No. 3 ( 2002-02-01), p. 1046-1052
    Abstract: The lattice sites of ion-implanted Li atoms in 6H-, 4H-, and 3C-SiC were studied. Radioactive Li8 ions (t1/2=0.84 s) were implanted with 60 keV into the crystalline SiC samples, and the channeling and blocking effects of 1.6 MeV alpha particles emitted in the decay were measured to determine the Li lattice sites. The alpha emission channeling spectra measured along different crystallographic directions reveal that Li occupies mainly interstitial sites with tetrahedral symmetry, centered along the c-axis atom rows in the hexagonal lattices. In the cubic 3C-SiC structure, Li is located on tetrahedral interstitial sites as well. For 6H-SiC, the implantation temperature was varied between 200 and 823 K without observing significant changes in the emission channeling spectra. Thus, Li diffusion or Li defect interaction resulting in a lattice site change does not occur in this temperature regime.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.1425442
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2002
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 5
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    Online Resource
    Cathodoluminescence and solid phase epitaxy in Ba-irradiated α-quartz
    AIP Publishing ; 2005
    In:  Journal of Applied Physics Vol. 97, No. 1 ( 2005-01-01)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 97, No. 1 ( 2005-01-01)
    Abstract: The luminescent properties of quartz and silica doped with photoactive ions depend on the structural and chemical properties of the matrix and doping elements. The dynamic solid phase epitaxy of α-quartz during Ba+-ion implantation at 300–1170K and its relationship to cathodoluminescence emission are investigated in this work. Rutherford backscattering channeling analysis revealed that the amorphous layer created by 1×1015 175keVBaions∕cm2 at 300K almost disappeared when the implantation temperature was raised to 1120K. Between 770 and 1100K the cathodoluminescence spectra taken at room temperature exhibit dramatic changes with the implantation temperature and allow to distinguish between color centers related to quartz, ion-irradiated silica, and implanted Ba ions. After achieving almost complete epitaxial recovery, only a violet band at 3.4eV remained, which we attribute to Ba-related luminescence centers. Samples first implanted with Ba ions and then postannealed in air or O218 atmosphere up to 1320K did not show full epitaxy of the amorphized layer.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.1829791
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2005
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 6
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    Online Resource
    Rate of population of CO( v ) in a CS2/O2 flame
    AIP Publishing ; 1977
    In:  The Journal of Chemical Physics Vol. 67, No. 5 ( 1977-09-01), p. 2304-2308
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 67, No. 5 ( 1977-09-01), p. 2304-2308
    Abstract: The rate of vibrational population of carbon monoxide in a steady CS2/O2 flame has been determined from CO overtone emission. A steady-state analysis indicates that, for a flame, the fifteenth vibrational level has the largest rate of population.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/1.435065
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1977
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 7
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    Online Resource
    Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface
    AIP Publishing ; 2005
    In:  Applied Physics Letters Vol. 87, No. 20 ( 2005-11-14)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 87, No. 20 ( 2005-11-14)
    Abstract: Surface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer thickness on the c-Si surface passivation quality resulting in the determination of the fixed charge density, Qf, within the a-SiCx(n):H film and the fundamental recombination of holes, Sp0. The main result is that surface recombination velocity decreases with film thickness up to 40nm and then saturates. The evolution of the interface parameters indicates that Qf could be located in a layer less than 10nm thick. In addition, Sp0 increases with thinner films probably due to different hydrogenation and saturation of interface dangling bonds during forming gas annealing.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2130530
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2005
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 8
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    Online Resource
    Visible cathodoluminescence from Eu-implanted single- and polycrystal c-BN annealed under high-temperature, high-pressure conditions
    AIP Publishing ; 2004
    In:  Applied Physics Letters Vol. 84, No. 21 ( 2004-05-24), p. 4286-4288
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 84, No. 21 ( 2004-05-24), p. 4286-4288
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1753053
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2004
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 9
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    Online Resource
    Flux-creep-limited critical currents in YBa2Cu3O7−δ ceramics
    AIP Publishing ; 1989
    In:  Applied Physics Letters Vol. 55, No. 11 ( 1989-09-11), p. 1135-1137
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 55, No. 11 ( 1989-09-11), p. 1135-1137
    Abstract: Critical currents of YBa2Cu3O7−δ bulk-sintered samples were measured at and above 77 K in the presence of magnetic fields. In moderate magnetic fields a H−n dependence with n & lt;1 was observed. Transport measurements give n≂0.5, indicating that critical currents are limited by flux creep rather than by field quenching of Josephson junctions.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.102459
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1989
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 10
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    Extensive analysis of photovoltaic battery self-consumption: Evaluation through an innovative district case-study
    AIP Publishing ; 2019
    In:  Applied Physics Reviews Vol. 6, No. 2 ( 2019-06-01)
    Details
    In: Applied Physics Reviews, AIP Publishing, Vol. 6, No. 2 ( 2019-06-01)
    Abstract: Energy storage is one of the key elements within the actual stage of the energy transition, as it is probably one of the most important factors to allow high penetration of fluctuating renewable energies, such as wind or solar, in the existing power systems. Intensive research is being conducted to assess the economic aspects and technical performance of renewable energy-based systems supported by batteries by evaluating different services that batteries can provide to the electric grid or to the end-consumers. In Germany, where the majority of the currently installed 43 GW of PV capacity corresponds to small residential, commercial, or industrial facilities, an interesting market for batteries to enhance local self-consumption and autarky is already booming, with more than 80 000 storage system installations in 2017. In this context, this study presents a comprehensive analysis of the photovoltaic battery model by analyzing the technical and economic consequences that variations on the most relevant system parameters induce. The presented results are based on high resolution data obtained from a representative residential district with an autarky of above 95%. The employed battery model is based on the results obtained through an extensive test campaign and includes electrical and thermal sub-models. The analysis predicts that grid parity of residential PV battery systems can be reached in the upcoming years, with especially great potential of the retrofitting market for those PV installations which run out of the feed-in tariff policy.
    Type of Medium: Online Resource
    ISSN: 1931-9401
    URL: Article
    DOI: 10.1063/1.5049665
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2265524-4
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