In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 219 ( 1991)
Abstract:
We studied the layer by layer deposition technique of a-Si:H film, where the hydrogen radicals are exposed between the deposition of each layer. The effects of each layer thickness and hydrogen radical exposure time on the electrical and optical properties were studied. With the decrease of the each layer thickness, more hydrogen is involved in the network if the structure is still amorphous, but the hydrogen content is very small for microcrystal Si formed by long exposure to hydrogen radicals in between the depositions of thin layers.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-219-775
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1991
Permalink