In:
Journal of Applied Physics, AIP Publishing, Vol. 79, No. 12 ( 1996-06-15), p. 9200-9205
Abstract:
This work studied the AuGe to n-InP/ohmic contact system with the addition of Pt. It studied two contact schemes, i.e., Au/Ge/Pt/n-InP and Au/Pt/Au/Ge/n-InP. The specific contact resistances, the thermal stability, as well as the microstructure of the system, were systematically studied with the aid of scanning electron microscopy, Auger electron spectroscopy, Rutherford backscattering analysis, and x-ray diffraction. The processing condition to achieve the optimum contact resistance was also sought and it was found that a specific contact resistance of 2.15×10−6 Ω cm2 could be obtained if the Au/Ge/Pt/n-InP contact system was rapid thermal annealed at 550 °C for 30 s. The system was also found to be able to achieve low specific contact resistances for a wide range of anneal temperature from 400 to 550 °C. It was found that the Pt existence in-between AuGe and InP improved the surface morphology, the contact interface uniformity, and the thermal stability. The system could withstand a thermal aging at 400 °C for 80 h with only a minimal increase on the specific contact resistance.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1996
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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