In:
Applied Physics Letters, AIP Publishing, Vol. 94, No. 3 ( 2009-01-19)
Abstract:
The morphological stability of NiSi is investigated when 40% of Si is mixed into an as deposited 10 nm Ni film. When annealing at 3 °C/s, scanning electron microscopy images and in situ sheet-resistance measurements show that NiSi agglomeration is delayed by more than 100 °C. In situ x-ray diffraction reveals that NiSi grows from an unusual transient hexagonal θ-nickel-silicide phase. The significant improvement of the NiSi film’s morphological stability can be related to its microstructure, with large grains and a strong texture. This peculiar microstructure is compared to the microstructure of the θ-nickel-silicide precursor by electron backscattering diffraction and pole figures.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2009
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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