In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 28, No. 3 ( 2010-05-01), p. C3A1-C3A4
Kurzfassung:
High-κ dielectric Ga2O3(Gd2O3) (GGO) has been deposited on Ge (100) at room temperature using molecular beam epitaxy. In situ angular-resolved x-ray photoelectron spectroscopy on the GGO/Ge after gate dielectric deposition and 500°C postdeposition annealing has exhibited negligible Ge interdiffusion, thus revealing high thermal stability of the heterostructure. The CF4-plasma treatment on the passivated GGO/Ge has greatly improved the capacitance-voltage characteristics of the metal-oxide-semiconductor capacitors, besides the very low gate leakage current density of 3.2×10−9A∕cm2 at a flat-band voltage +1V. These excellent interfacial characteristics have been achieved without employing any intentional passivation layers.
Materialart:
Online-Ressource
ISSN:
2166-2746
,
2166-2754
Sprache:
Englisch
Verlag:
American Vacuum Society
Publikationsdatum:
2010
ZDB Id:
3117331-7
ZDB Id:
1475429-0
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