In:
Journal of Applied Physics, AIP Publishing, Vol. 108, No. 8 ( 2010-10-15)
Abstract:
Spin-splitting energies of wurtzite AlN and InN are calculated using the linear combination of atomic orbital method, and the data are analyzed utilizing the two-band k⋅p model. It is found that in the k⋅p scheme, a spin-degenerate surface exists in the wurtzite Brillouin zone. Consequently, the D’yakonov-Perel’ spin relaxation mechanism can be effectively suppressed for all spin components in the [001]-grown wurtzite quantum wells (QWs) at a resonant condition through application of appropriate strain or a suitable gate bias. Therefore, wurtzite QWs (e.g., InGaN/AlGaN and GaN/AlGaN) are potential structures for spintronic devices such as the resonant spin lifetime transistor.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2010
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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