In:
Chemistry – A European Journal, Wiley, Vol. 27, No. 57 ( 2021-10-13), p. 14217-14224
Abstract:
Multi‐anvil and laser‐heated diamond anvil methods have been used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500–1800 K, respectively. Synchrotron angle dispersive X‐ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge−Si solid solutions ( P 6 3 / mmc ). Taken together, the multi‐anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge−Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge−Si solid solution family, and is of interest for optoelectronic applications.
Type of Medium:
Online Resource
ISSN:
0947-6539
,
1521-3765
DOI:
10.1002/chem.202102595
Language:
English
Publisher:
Wiley
Publication Date:
2021
detail.hit.zdb_id:
1478547-X
Permalink