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  • AIP Publishing  (4)
  • Orpella, A.  (4)
  • English  (4)
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  • AIP Publishing  (4)
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  • English  (4)
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  • 1
    Online Resource
    Online Resource
    Improvement of crystalline silicon surface passivation by hydrogen plasma treatment
    AIP Publishing ; 2004
    In:  Applied Physics Letters Vol. 84, No. 9 ( 2004-03-01), p. 1474-1476
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 84, No. 9 ( 2004-03-01), p. 1474-1476
    Abstract: A completely dry low-temperature process has been developed to passivate 3.3 Ω cm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide (a-SiCx:H) deposition, without breaking the vacuum. We measured effective lifetime, τeff, through a quasi-steady-state photoconductance technique. Experimental results show that hydrogen plasma treatment improves surface passivation compared to classical HF dip. Seff values lower than 19 cm s−1 were achieved using a hydrogen plasma treatment and an a-SiCx:H film deposited at 300 °C.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1647702
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2004
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    Surface passivation of n -type crystalline Si by plasma-enhanced-chemical-vapor-deposited amorphous SiCx:H and amorphous SiCxNy:H films
    AIP Publishing ; 2002
    In:  Applied Physics Letters Vol. 81, No. 23 ( 2002-12-02), p. 4461-4463
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 81, No. 23 ( 2002-12-02), p. 4461-4463
    Abstract: Excellent passivation of n-type crystalline silicon surface is demonstrated by means of intrinsic amorphous silicon carbide (a-SiCx:H) thin films. An optimum CH4/SiH4 ratio is determined, leading to an effective surface recombination velocity, Seff, lower than 54 cm s−1. By adding a constant flow of N2 to the precursor gases, the surface passivation is improved to Seff⩽16 cm s−1. From infrared spectroscopy measurements of these films, it can be deduced that the N2 flow increases the carbon content of the layers for a constant CH4/SiH4 ratio. The dependence of the effective lifetime, τeff, on the excess charge carrier density, Δn, is measured using the quasisteady-state photoconductance technique, and these curves are simulated through an electrical model based on an insulator/semiconductor structure.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1527230
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2002
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiCx:H films
    AIP Publishing ; 2001
    In:  Applied Physics Letters Vol. 79, No. 14 ( 2001-10-01), p. 2199-2201
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 79, No. 14 ( 2001-10-01), p. 2199-2201
    Abstract: Excellent passivation properties of intrinsic amorphous silicon carbide (a-SiCx:H) films deposited by plasma enhanced chemical vapor deposition on single-crystalline silicon (c-Si) wafers have been obtained. The dependence of the effective surface recombination velocity, Seff, on deposition temperature, total pressure and methane (CH4) to silane (SiH4) ratio has been studied for these films using lifetime measurements made with the quasi-steady-state photoconductance technique. The dependence of the effective lifetime, τeff, on the excess carrier density, Δn, has been measured and also simulated through a physical model based on Shockley–Read–Hall statistics and an insulator/semiconductor structure with fixed charges and band bending. A Seff at the a-SiCx:H/c-Si interface lower than 30 cm s−1 was achieved with optimized deposition conditions. This passivation quality was found to be three times better than that of noncarbonated amorphous silicon (a-Si:H) films deposited under equivalent conditions.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1404406
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    Online Resource
    Online Resource
    Crystalline silicon surface passivation with amorphous SiCx:H films deposited by plasma-enhanced chemical-vapor deposition
    AIP Publishing ; 2005
    In:  Journal of Applied Physics Vol. 98, No. 11 ( 2005-12-01)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 98, No. 11 ( 2005-12-01)
    Abstract: Surface-passivating properties of hydrogenated amorphous silicon carbide films (a-SiCx:H) deposited by plasma-enhanced chemical-vapor deposition on both p- and n-type crystalline silicon (c-Si) have been extensively studied by our research group in previous publications. We characterized surface recombination by measuring the dependence of the effective lifetime (τeff) on excess carrier density (Δn) through quasi-steady-state photoconductance technique. Additionally, we fitted the measured τeff(Δn) curves applying an insulator/semiconductor model which allows us to determine the surface recombination parameters. In this paper, this model is analyzed in detail focusing on the accuracy in the determination of the fitting parameters and revealing uncertainties not detected up to now. Taking advantage of this analysis, the dependence of surface passivation on film deposition conditions is revised including intrinsic a-SiCx:H films on both p- and n-type c-Si and phosphorus-doped a-SiCx:H films on p-type c-Si. As a consequence, a broad view of this passivation scheme is obtained.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.2140867
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2005
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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