In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 18, No. 1 ( 2000-01-01), p. 519-523
Kurzfassung:
A Cameca IMS-4f secondary ion mass spectrometry instrument has been applied to the study of the diffusion of ultralow energy B implants in crystalline silicon. Several analyses on sub-keV B implants have been performed by using low energy O2+ beams both before and after thermal annealing. The limits and the accuracy of the technique are discussed. It is shown that a 1.5 keV beam provides the depth resolution needed to accurately characterize, beyond the equilibrium depth (∼5 nm), a 500 eV B implant. This measurement protocol provides at the same time a significantly low detection limit (1×1015 at/cm3) and a very fast sputter rate (25 nm/min), necessary to characterize deep diffused profiles. Several artifacts are discussed, with emphasis to those affecting the tail region of the profiles.
Materialart:
Online-Ressource
ISSN:
1071-1023
,
1520-8567
Sprache:
Englisch
Verlag:
American Vacuum Society
Publikationsdatum:
2000
ZDB Id:
3117331-7
ZDB Id:
3117333-0
ZDB Id:
1475429-0
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