In:
Applied Physics Letters, AIP Publishing, Vol. 81, No. 16 ( 2002-10-14), p. 3079-3081
Abstract:
We have investigated the channel-length dependence of responses to a vapor analyte with a series of α,ω-dihexylquarterthiophene (DHα4T) field-effect transistors (FETs). Single-crystalline DHα4T devices deposited by vacuum sublimation at substrate temperatures of 70 °C are compared with polycrystalline DHα4T films deposited at room temperature. By changing the length of FET channels and/or the size of polymer grains, the number of grain boundaries per device is changed systematically. A larger response to vapor analyte is obtained by increasing the number of grain boundaries per device, showing that vapor sensing occurs mainly at grain boundaries.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2002
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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