In:
Applied Physics Letters, AIP Publishing, Vol. 69, No. 26 ( 1996-12-23), p. 4108-4110
Abstract:
The electrical characteristics of field-effect transistors using solution cast regioregular poly(3-hexylthiophene) are discussed. We demonstrate that both high field-effect mobilities (ca. 0.045 cm2/V s in the accumulation mode and 0.01 cm2/V s in the depletion mode), and relatively high on/off current ratios (greater than 103) can be achieved. We find that the film quality and field-effect mobility are strongly dependent on the choice of solvents. In addition, treating a film with ammonia or heating to 100 °C under N2 can increase the on/off ratio without decreasing the mobility.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1996
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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