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  • Online Resource  (4)
  • AIP Publishing  (4)
  • English  (4)
  • 1
    Online Resource
    Online Resource
    Charge-independent protein adsorption characteristics of epitaxial graphene field-effect transistor on SiC substrate
    AIP Publishing ; 2021
    In:  Journal of Applied Physics Vol. 130, No. 7 ( 2021-08-21)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 130, No. 7 ( 2021-08-21)
    Abstract: Charge-independent biomolecule detection using field-effect transistors (FETs) with single-crystal and large-area epitaxial graphene films fabricated on SiC substrates is demonstrated. To obtain clean graphene channel surfaces, FETs were fabricated using stencil mask lithography, which is a resist-free fabrication process. Proteins with various isoelectric points (pI: 5.6–9.9) were used as targets. Transfer characteristics [drain current (ID) vs solution-gate voltage (VG) characteristics] were measured by changing the pH of the buffer solution. The ID–VG characteristics exhibited a clear negative gate voltage shift for both positively and negatively charged proteins, indicating that the epitaxial graphene FETs could not detect the charge type of the protein and electrons were doped by the adsorption of both positively and negatively charged proteins. These results cannot be explained by conventional electrostatic effects. Therefore, it can be concluded that the detection of biomolecules by the epitaxial graphene FETs occurred through charge transfer from the proteins. Moreover, the dissociation constants between the proteins and epitaxial graphene films were as small as 100 pM, indicating the high sensitivity of the graphene FETs.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/5.0054688
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Thermal desorption of structured water layer on epitaxial graphene
    AIP Publishing ; 2021
    In:  AIP Advances Vol. 11, No. 12 ( 2021-12-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 11, No. 12 ( 2021-12-01)
    Abstract: Thermal desorption of the structured water layer on graphene was observed in this study via electrical conductivity measurements. Specifically, a structured water layer was formed on the graphene surface via deionized water treatment, following which we examined the thermal desorption process of the layer using sheet resistance measurements. The water molecules acting as a p-type dopant were strongly adsorbed on graphene, forming a solid layer. Consequently, the layer was completely removed from the graphene surface at 300⁡°C. The thermal desorption spectrum of the structured water layer on graphene was quantitatively obtained by converting the measured sheet resistance to carrier density change.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0075191
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 2583909-3
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  • 3
    Online Resource
    Online Resource
    The effects of substrate temperature on the donor ionization energy and on the material properties of selectively doped short-period GaAs:Si/AlAs superlattices
    AIP Publishing ; 1987
    In:  Journal of Applied Physics Vol. 62, No. 5 ( 1987-09-01), p. 1925-1930
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 62, No. 5 ( 1987-09-01), p. 1925-1930
    Abstract: The effects of substrate temperature on the donor ionization energy and on the electrical and photoluminescent properties of selectively doped short-period GaAs:Si/AlAs superlattices are studied. The superlattice structure is characterized by means of double-crystal x-ray diffraction. It is found that the interface between the GaAs and AlAs layers slightly degrades even at a low substrate temperature of 550 °C, and that the degradation is enhanced with an increase in the substrate temperature. The Si donor level is still shallow for substrate temperatures lower than 600 °C, since only a slight degradation occurs in this temperature range. However, the Si donor forms an excess deep DX center near the interface region for higher substrate temperatures. Accordingly, the donor binding energy increases with increasing substrate temperature, since the contribution from the mixed interface region becomes larger. With an increase in the substrate temperature, the photoluminescence peak intensity increases, although the electron concentration at room temperature decreases. This phenomenon is discussed in relation to the formation of donorlike deep levels in AlAs/GaAs short-period superlattices.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.339551
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1987
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Electron transfer characteristics of amino acid adsorption on epitaxial graphene FETs on SiC substrates
    AIP Publishing ; 2022
    In:  AIP Advances Vol. 12, No. 10 ( 2022-10-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 12, No. 10 ( 2022-10-01)
    Abstract: Clarifying the adsorption characteristics of biomolecules on graphene surfaces is critical for the development of field-effect transistor (FET)-based biosensors for detecting pH, DNA, proteins, and other biomarkers. Although there are many reports on biomolecule detection using graphene FETs, the detection mechanism has not yet been clarified. In this study, the adsorption behavior and electron transfer characteristics of 20 proteinogenic amino acids on graphene field-effect transistors are investigated. Large single-crystal graphene films were epitaxially grown on SiC substrates by a resist-free metal stencil mask lithography process then patterned by air plasma etching to form FET devices. Amino acids with different charge conditions (positive or negative charge) were introduced onto the epitaxial graphene surface in solution. The charge neutral points of the drain current vs gate voltage curves shifted in the negative gate voltage direction after the introduction of all amino acids, regardless of the type of amino acid and its charge condition. These amino acid adsorption characteristics agree well with previously reported protein adsorption characteristics on epitaxial graphene surfaces, indicating that the adsorption of proteins in the liquid phase occurs by electron doping to the graphene surface. These results indicate that non-specific protein binding always leads to electron doping of epitaxial graphene FETs.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0124084
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 2583909-3
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