In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 16, No. 2 ( 1998-03-01), p. 871-874
Abstract:
We observed the emission characteristics and stability of TiN-coated Si field emitter arrays (FEAs) with a TiW gate structure. The TiN layer on Si tips was formed by a two-step rapid thermal nitridation process in an NH3 ambient by which a Ti layer was thermally converted to a TiN/ TiSi2 bilayer. This process could suppress the formation of TiO2 on the surface and make the TiN layer thicker than a one-step process. By coating Si tips with TiN, the operating voltage of the TiN-coated Si FEAs was reduced by about 20 V compared with non-coated ones. Also, the TiN-coated Si FEAs showed thermally stable electron emission compared with non-coated ones.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1998
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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