Note: Front Cover -- Self-Assembled InGaAs/GaAs Quantum Dots -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Theoretical Bases of the Optical Properties of Semiconductor Quantum Nano-Structures -- I. Introduction -- Il. Electronic States of Semiconductor Quantum Nano-Structures -- III. Interband Optical Transition -- IV. Exciton Optical Properties -- V. Quantum-Dot Lasers -- Vl. Summary -- Appendix -- References -- Chapter 2. Molecular Beam Epitaxial Growth of Self-Assembled InAs/GaAs Quantum Dots -- I. Introduction -- II. The Stranski-Krastanow Growth Mode -- III. Closely Stacked InAs/GaAs Quantum Dots -- IV. Columnar InAs/GaAs Quantum Dots -- V. Summary -- Acknowledgments -- References -- Chapter 3. Metalorganic Vapor Phase Epitaxial Growth Of Self-Assembled InGaAs/GaAs Quantum Dots Emitting at 1.3 μm -- I. Introduction -- Il. Atomic Layer Epitaxial Growth -- III. Alternate Supply Growth of InGaAs Dots By In-As-Ga-As Sequence -- IV. Alternate Supply Growth of InGaAs Dots By The In-Ga-As Sequence -- V. The Growth Process -- Vl. Summary -- References -- Chapter 4. Optical Characterization of Quantum Dots -- I. Introduction -- II. Light Emission From Discrete Energy States -- III. Controllability of Quantum Confinement -- IV. Radiative Emission Efficiency -- V. Summary -- References -- Chapter 5. The Photon Bottleneck Effect in Quantum Dots -- I. Introduction -- Il. A Model of the Carrier Relaxation Process in Quantum Dots -- III. Experiments on Light Emission and Carrier Relaxation in Quantum-Dot Discrete Energy Levels -- IV. Influence of Thermal Treatment -- V. Simulation of Laser Performance Including the Auger Relaxation Process -- Vl. Summary -- References -- Chapter 6. Self-Assembled Quantum Dot Lasers -- I. Introduction -- Il. Fundamental Properties of Quantum-Dot Lasers. , III. Fabrication of Self-Assembled Quantum-Dot Lasers -- IV. Key Technologies for the Next Era -- V. Conclusion -- Acknowledgments -- References -- Chapter 7. Applications of Quantum Dot to Optical Devices -- I. Introduction -- Il. Properties of Quantum Dots -- III. Quantum Dots for Very High Speed Light Modulation -- IV. Quantum Dots as a Nonlinear Medium -- V. Persistent Hole Burning Memory -- VI. Summary and Perspectives on Quantum-Dot Optical Devices -- Acknowledgment -- References -- Chapter 8. The Latest News -- I. Lasing With Low-Threshold Current And High-Output Power From Columnar-Shaped Quantum Dots -- Il. Effect of Homogeneous Broadening of Single-Dot Optical Gain on Lasing Spectra -- III. Quantum Dots on InGaAs Substrates -- IV. Quantum Dots Emitting at 1.3 µM Grown by Low Growth Rates and with an InGaAs Cap -- V. Reduced-Temperature-Induced Variation of Spontanenous Emission in Alternate Supply (ALS) Quantum Dots Covered By In0.3Ga0.7As -- References -- Index -- Contents of Volumes in This Series.

Note: Front Cover -- Semiconductors for Room Temperature Nuclear Detector Applications -- Copyright Page -- Contents -- List of Contributors -- Preface -- Chapter 1. Introduction and Overview -- I. Introduction -- II. Semiconductor Nuclear Detectors -- III. Applications -- IV. Outline of Text -- References -- Chapter 2. High-Purity Germanium Detectors -- I. Introduction -- II. Crystal Growth -- III. Characterization -- IV. Large Volume Detectors -- V. Charge Collection -- VI. Germanium X-Ray Detectors -- VII. Summary -- References -- Chapter 3. Growth of Mercuric Iodide -- I. The Crystal Structure and Phases of Mercuric Iodide -- II. Physical Properties Relevant to Crystal Growth -- III. Growth of High Purity Mercuric Iodide Crystals -- IV. Crystal Perfection -- V. Recent Developments -- VI. Challenges in Crystal Growth -- References -- Chapter 4. Electrical Properties of Mercuric Iodide -- List of Symbols -- I. Introduction -- II. Carrier Transport -- III. Deep Levels -- IV. Photoconductivity -- V. Surface Effects -- VI. Detector Performance -- VII. Conclusions -- References -- Chapter 5. Optical Properties of Red Mercuric Iodide -- I. Introduction -- II. Band Structure -- III. Experimental Techniques and Measured Values for Optical Constants -- IV. Study of Processing by Photoluminescence Spectroscopy -- V. Conclusions -- References -- Chapter 6. Growth Methods of CdTe Nuclear Detector Materials -- I. Introduction -- II. Phase Diagram -- III. Synthesis and Purification -- IV. Growth of Bulk CdTe -- V. High Resistivity Materials -- VI. Experimental Results and Conclusion -- References -- Chapter 7. Characterization of CdTe Nuclear Detector Materials -- I. Introduction -- II. Impurities Analysis -- III. Surface Analysis -- IV. Electrical and Optical Characterization -- V. Discussion and Conclusions -- References. , Chapter 8. CdTe Nuclear Detectors and Applications -- I. Introduction -- II. Detection Parameters -- III. CdTe Detectors -- IV. Improvement of Detector Quality -- V. Applications of CdTe Detectors -- References -- Chapter 9. Cd1 -x Znx Te Spectrometers for Gamma and X-Ray Applications -- I. Introduction -- II. Growth of Cd1-x ZnxTe Crystals -- III. Material Properties of Cd1 -x ZnxTe -- IV. Defect Characterization and Effects on Device Response -- V. Detector Characterization and Effects on Device Response -- VI. Imaging Applications -- VII. Future Work -- References -- Chapter 10. Gallium Arsenide Radiation Detectors and Spectrometers -- List of Symbols -- I. Introduction -- II. Basic Properties of GaAs -- III. General Detector Operation -- IV. Epitaxial GaAs Detectors -- V. Bulk GaAs Detectors Operated in Quantum Pulse Mode -- VI. Bulk GaAs Photoconductive Detectors Operated in Current Mode -- VII. Summary -- References -- Chapter 11. Lead Iodide Crystals and Detectors -- I. Introduction -- II. Physical Properties -- III. Preparation of Lead Iodide Crystals -- IV. Radiation Detector Fabrication and Implementation -- V. Potential Applications of Lead Iodide -- VI. Conclusion -- References -- Chapter 12. Other Materials: Status and Prospects -- I. Introduction -- II. Detector Materials -- III. Current Status and Prospects -- References -- Chapter 13. Characterization and Quantification of Detector Performance -- I. Introduction -- II. X-Ray and Gamma Ray Spectroscopy -- III. Electronic Characterization -- IV. Correlation of Material Properties with Detector Performance -- V. Concluding Remarks -- References -- Chapter 14. Electronics for X-Ray and Gamma Ray Spectrometers -- I. Introduction -- II. Electronic Noise Limited Systems -- III. Statistical Noise Limited Systems -- IV. Trapping Noise Limited Systems. , V. Miniaturized Electronics and Multielement Systems -- References -- Chapter 15. Summary and Remaining Issues for Room Temperature Radiation Spectrometers -- I. Introduction -- II. Materials Requirements -- III. Issues in HgI2 Detector Technology -- IV. Materials Issues in CdTe and CdZnTe -- V. Unresolved Problems and Conclusions -- References -- Index -- Contents of Volumes in This Series.

Note: Front Cover -- Cumulative Subject and Author Index Including Tables of Contents Volumes 1-50 -- Copyright Page -- Contents -- Preface -- Subject Index -- Author Index -- Contents of Volumes 1-50.

Note: Front Cover -- Semiconductors and Semimetals, Volume 65 -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Polymeric and Molecular Organic Light Emitting -- I. Introduction -- II. Polymers Vs Molecular Organic Materials -- III. Polymer Led Structures -- IV. Current-Voltage-Luminance Characteristics -- V. The Good and the Bad of Organic Materials -- VI. A Light at the End of the Tunnel? -- References -- Chapter 2. Thin Film Electroluminescence -- I. Introduction -- II. Phenomenology -- III. Basic Mechanisms in Thin Film Electroluminescence -- IV. Thin Film El Devices -- Measuring TFEL -- References -- Chapter 3. Materials in Thin Film Electroluminescent Devices -- I. Introduction -- II. Device Structures and Characteristics -- III. Film Deposition Techniques -- IV. Tfel Phosphors -- V. Other Materials -- VI. Conclusions -- References -- Chapter 4. Microcavities for Electroluminescent Devices -- I. Introduction -- II. Theoretical Description -- III. Basic Examples -- IV. Applications -- V. Conclusion -- References -- Index -- Contents of Volumes in this Series.

Note: Front Cover -- Gallium Nitride (GaN) II -- Copyright Page -- Contents -- Preface -- List of Contributors -- CHAPTER 1. Hydride Vapor Phase Epitaxial Growth of III-V Nitrides -- List of Acronyms and Abbreviations -- I. Introduction -- II. Nitride HVPE Growth -- III. GaN Film Characterization -- IV. Light-Emitting Diodes -- V. HVPE for Nitride Substrates -- VI. Conclusions -- References -- CHAPTER 2. Growth of III-V Nitrides by Molecular Beam Epitaxy -- I . Introduction -- II. Background of Molecular Beam Epitaxy Techniques -- III. Nitrogen Sources Used for the Growth of III-V Nitrides by Molecular Beam Epitaxy -- IV. GaN Films -- V. InGaAlN Alloys -- VI. Multiquantum Wells -- VII. Device Applications -- VIII. Conclusions -- References -- CHAPTER 3. Defects in Bulk GaN and Homoepitaxial Layers -- I. Introduction -- II. Polarity of the Crystals -- III. Defect Distribution -- IV. Nanotubes -- V. PL and Point Defects -- VI. Influence of Annealing -- VII. Larger-Dimension Bulk GaN Crystals -- VIII. Homoepitaxial Layers -- IX. Summary -- References -- CHAPTER 4. Hydrogen in III-V Nitrides -- I. Introduction -- II. Theoretical Framework -- III. Experimental Observations -- IV. Conclusions and Outlook -- References -- CHAPTER 5. Characterization of Dopants and Deep Level Defects in Gallium Nitride -- I. Introduction -- II. Materials Preparation -- III. Shallow Dopants -- IV. Deep Level Defects -- V. Conclusions -- References -- CHAPTER 6. Stress Effects on Optical Properties -- I. Introduction -- II. The Crystalline Structures of III-Nitrides -- III. Effects of Strain Fields on the Electronic Structure of Wurtzite III Nitrides -- IV. Exciton Oscillator Strengths and Longitudinal-Transverse Splittings -- V. Origin of the Strain -- VI. Phonons Under Strain Fields -- VII. Shallow vs Deep-Level Behavior Under Hydrostatic Pressure. , VIII. Influence of Strain Fields on Optical Properties of GaN-AlGaN Quantum Wells -- IX. Self-Organized Quantum Boxes -- X. Conclusion -- References -- CHAPTER 7. Strain in GaN Thin Films and Heterostructures -- I. Thin-Film Growth at Low Temperatures -- II. Stress/Strain Relations -- III. Control of Hydrostatic and Biaxial Stress and Strain Components -- IV. Strained AlN/InN/GaN Heterostructures -- V. Perspectives -- References -- CHAPTER 8. Nonlinear Optical Properties of Gallium Nitride -- I. Introduction -- II. Background -- III. Second-Order Nonlinear Optical Phenomena -- IV. Third-Order Nonlinear Optical Phenomena -- V. Potential Devices -- VI. Conclusions -- References -- CHAPTER 9. Magnetic Resonance Investigations on Group III-Nitrides -- I. Introduction -- II. Magnetic Resonance-The Basis of Identification -- III. Shallow Donors in Cubic and Hexagonal GaN (EPR Results) -- IV. Shallow and Deep Donors in GaN (ODMR Results) -- V. Shallow and Deep Acceptors in GaN -- VI. Defects Induced by Particle Irradiation in GaN and AIN -- VII. Device-Related Magnetic Resonance Studies -- VIII. Transition Metal Impurities -- IX. Outlook -- References -- Chapter 10. GaN and AIGaN Utraviolet Detectors -- I. Introduction -- II. Principle of Operation -- III. Detectiviy and Noise Equivalent Power (NEP) -- IV. GaN Photodetector Fabrication -- V. GaN-Based Photoconductive Detectors -- VI. GaN-Based Photovoltaic Detectors -- VII. Optoelectronic A1GaN/GaN Field Effect Transistors -- VIII. Conclusions and Future Challenges -- References -- CHAPTER 11. III-V Nitride-Based X-ray Detectors -- I. Introduction -- II. Materials Requirements and Current Status -- III. The Photoconductivity Response of Nitrides -- IV. Effects of Irradiation on GaN -- V. X-ray Response of Prototype Diodes -- VI. Summary and Future Work -- References -- Index. , Contents of Volumes in This Series.

Note: Front Cover -- High Pressure in Semiconductor Physics II -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Parallel Transport in Low-Dimensional Semiconductor Structures -- I. Introduction -- II. The Effect of Pressure -- III. Integer Quantum Hall Effect -- IV. Fractional Quantum Hall Effect -- V. Magnetophonon Resonance Effect Under Hydrostatic Pressure in GaAs/Al0.28Ga0.72As, Ga0 47 In0.53As/Al0.48In0.48In0.52, and in Ga0.47In0.53As/InP Heterojunctions -- Acknowledgments -- References -- Chapter 2. Tunneling Under Pressure: High-Pressure Studies of Vertical Transport in Semiconductor Heterostructures -- I. Introduction -- II. Theory and Calculation -- III. Experimental Techniques -- IV. High Pressure Studies of Negative Differential Resistance -- V. Concluding Remarks -- Acknowledgments -- References -- Chapter 3. Phonons, Strains, and Pressure in Semiconductors -- I. Introduction -- II. Background -- III. Effects of Hydrostatic Pressure on Optical Phonons -- IV. Effects of Strains on Optical Phonons -- V. Strain Characterization of Heterojunctions and Superlattices -- VI. Concluding Remarks -- Acknowledgments -- Appendix -- References -- Chapter 4. Effects of External Uniaxial Stress on the Optical Properties of Semiconductors and Semiconductor Microstructures -- I. Introduction -- II. Effects of Homogeneous Deformation on Electronic Energy Levels -- III. Determination of Intervalley Electron-Phonon and Hole-Phonon Interactions in Indirect Gap Semiconductors -- IV. Piezo-Optical Response of Ge and GaAs in the Opaque Region -- V. Intrinsic Piezobirefringence in the Transparent Region -- VI. Effects of External Stress on Quantum States -- V. Summary -- VI. Acknowledgments -- References -- Chapter 5. Semiconductor Optoelectronic Devices -- I. Introduction -- II. Experimental Considerations -- III. Semiconductor Lasers. , IV. Uniaxial Strain Effects: Strained-Layer Lasers -- V. Hydrostatic Pressure Measurements of Avalanche Photodiodes: The Band-Structure Dependence of Impact Ionization -- VI. Summary -- Acknowledgments -- References -- Chapter 6. The Application of High Nitrogen Pressure in the Physics and Technology of III-N Compounds -- I. Introduction -- II. Thermal Stability of AIN, GaN, and InN -- III. Solubility of N in Liquid Al, Ga, and In -- IV. Kinetic Limitations of Dissolution of Nitrogen in Liquid Al, Ga, and In -- V. High N2 Pressure Solution Growth of GaN -- VI. Physical Properties of Pressure-Grown GaN Crystals -- VII. Wet Etching and Surface Preparation -- VIII. Homoepitaxy -- IX. Conclusions -- Acknowledgments -- References -- Chapter 7. Diamond Anvil Cells in High Pressure Studies of Semiconductors -- I. DAC: An Apparatus Par Excellence to Achieve Highest Static Pressure -- II. Condensed Matter Physics Techniques Coupled to a DAC -- III. High Pressure Studies of Semiconductors -- IV. Concluding Remarks -- Acknowledgments -- References -- Index -- Contents of Volumes in This Series.

Note: Front Cover -- Nonlinear Optics in Semiconductors II -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Second Order Nonlinearities and Optical Rectification -- I. Introduction -- II. Second-Order Nonlinear Effects in Bulk Semiconductors -- III. x(2) Experiments in Bulk Semiconductors -- IV. Second-Order Susceptibility in Semiconductor Quantum Wells and Superlattices -- V. Optical Rectification and Terahertz Emission in Semiconductors -- VI. Conclusions -- List of Abbreviations and Acronyms -- Refrences -- Chapter 2. Nonlinearities in Active Media -- I. Introduction -- II. Active Semiconductor Media -- III. Measurement Techniques -- IV. Nonlinear Index of Refraction in Active Media -- V. Data Analysis and Interpretation -- VI. Shaping and Saturation of Short Pulses in Active Waveguides -- VII. Four-Wave Mixing -- VIII. Applications -- IX. Summary -- References -- Chapter 3. Optical Responses of Quantum Wires/Dots and Microcavities -- I. Theoretical Aspects -- II. Experimental Results -- Refrences -- Chapter 4. Semiconductor Nonlinearities for Solid-state Laser Modelocking and Q-Switching -- I. Introduction -- II. Semiconductor Saturable Absorber Mirrors (SESAMs) -- III. SESAM Designs -- IV. Passively Modelocked Solid State Lasers Using SESAMs -- V. Passively Q-Switched Solid State Lasers Using SESAMs -- VI. Conclusions and Outlook -- List of Abbrevations and Acronyms -- References -- Chapter 5. Transient Grating Studies of Carrier Diffusion and Mobility in Semiconductors -- I. Optical Nonlinearities and Carrier Transport -- II. Transient Gratings -- III. Bulk Semiconductors -- IV. Exciton Saturation in MQWs -- V. In-Well Transport in MQWs -- VI. Cross-Well Transport in QWs -- VII. Hetero-n-i-pi Structures -- VIII. Conclusions -- References -- Index -- Contents of Volumes in This Series.

Note: Front Cover -- Sic Materials and Devices -- Copyright Page -- Contents -- List of Contributors -- Introduction -- Chapter 1. Materials Properties and Characterization of SiC -- I. Introduction -- II. Structural Properties -- III. Thermal Properties -- IV. Optical Properties -- V. Electrical Properties -- VI. Summary -- References -- Chapter 2. SiC Fabrication Technology: Growth and Doping -- I. Introduction -- II. SiC Bulk Crystal Growth -- III. SiC Epitaxial Growth -- IV. SiC Doping -- V. Conclusions -- References -- Chapter 3. Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n Junctions -- I. Introduction -- II. Electrical Properties of Metal-SiC Systems -- Ill. Surface Preparation Techniques -- IV. Metal Contacts to 6H-SiC -- V. Metal Contacts to 4H-SiC -- VI. Metal Contacts to 3C-SiC -- VII. SiC p-n Junctions Diode Rectifiers -- VIII. Summary and Conclusions -- References -- Chapter 4. SiC Transistors -- I. Introduction -- II. SiC Field-Effect Transistors: MOSFETs, MESFETs, and JFETs -- III. SiC Microwave Field-Effect Transistors -- IV. SiC Digital Integrated Circuits -- V. SiC Bipolar Transistors and Thyristors -- VI. Two-Dimensional Modeling of SiC Transistors -- VII. Analytical Transistor Models and Circuit Simulation (AIM-Spice) -- VIII. Potential Performance and Applications of SiC Transistors and Integrated Circuits -- References -- Chapter 5. SiC for Applications in High-Power Electronics -- I. Introduction -- II. Bulk SiC Growth -- III. Epitaxial Growth of SiC -- IV. Advantages of SiC for High-Power RF Systems -- V. The SiC MESFET: Design Considerations -- VI. MESFET Fabrication -- VII. 6H-SiC MESFET Results -- VIII. 4H-SiC MESFET Results -- IX. The SiC SIT: Design Considerations -- X. SIT Fabrication -- XI. 6H-SiC SIT Results -- XII. 4H-SiC SIT Results -- XIII. 450 W UHF SIT -- XIV. 2.0 kW UHF Module. , XV. S-band SiC SITs -- XVI. S-band SIT Device Scale-up -- XVII. SiC Power Switching Devices -- XVIII. Conclusions -- References -- Chapter 6. SiC Microwave Devices -- I. Introduction -- II. Background -- III. Semiconductor Material and Contact Properties -- IV. Semiconductor Device Models -- V. Temperature Effects -- VI. RF Active Devices -- VII. Summary -- References -- Chapter 7 SiC-Based UV Photodiodes and Light-Emitting Diodes -- I. Introduction -- II. SiC Blue LEDs -- III. SiC Green LEDs -- IV. UV Photodiodes -- V. Group III-Nitrides on 6H-SiC -- VI. Summary -- References -- Chapter 8. Beyond Silicon Carbide! III-V Nitride-Based Heterostructures and Devices -- I. Introduction -- II. Strain and Structural Defects -- III. Optical Manifestation of Defects -- IV. Applications -- V. Conclusions -- References -- Index -- Contents of Volumes in this Series.

Note: Front Cover -- Electroluminescence I -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Visible Light-Emitting Diodes -- I. Historical Overview -- II. LED Basics -- III. LED Technology -- IV. LED Performance and Related Technologies -- V. Applications of Visible LEDs -- VI. Future Trends -- References -- Chapter 2. High-Efficiency AlGaInP Light-Emitting Diodes -- I. Introduction -- II. AlGaInP Material Properties -- III. AlGaInP LED Device Design -- IV. Epitaxial Growth -- V. Device Fabrication and Packaging -- VI. AlGaInP Device Performance -- VII. Conclusions -- References -- Chapter 3. High-Brightness Nitride-Based Visible-Light-Emitting Diodes -- I. Introduction -- II. III-V Nitride Crystal Growth -- III. Electronic Properties and Characterization of III-V Nitride Films -- IV. Nitride LED Device Structures and Performance -- V. Summary and Conclusions -- References -- Chapter 4. Organic LED System Considerations -- I. Introduction -- II. Reliability Issues for Practical Application -- III. Driving Scheme -- IV. OLED Panels -- V. Summary -- References -- Chapter 5. Molecular Organic Light-Emitting Devices -- I. Overview -- II. Theory of Operation of Organic Light-Emitting Devices -- III. Improved Operation of Organic Light-Emitting Devices -- IV. Color-Tunable OLEDs in Full-Color Displays -- V. SUMMARY -- References -- Index -- Contents of Volumes in This Series.

Note: Front Cover -- Chemical Mechanical Polishing in Silicon Processing -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Introduction -- I. CMP: A Unique and Evolving Semiconductor Fabrication Technology-Past, Present, and Future -- Chapter 2. Equipment -- I. Introduction -- II. CMP Equipment Design Evolution -- III. Carriers -- IV. Platens -- V. Pad Conditioning -- VI. CMP Equipment Integration -- VII. Copper Polishing and CMP Tool Requirements -- VIII. 300-mm CMP Tools -- IX. Conclusion -- References -- Chapter 3. Facilitization -- I. Introduction -- II. Outline -- III. Slurry Distribution System Overview -- IV. Slurry Handling -- V. Slurry Distribution Systems -- VI. Slurry Dispense Engines -- VII. Slurry Blending Technology -- VIII. Slurry Measuring Techniques -- IX. Daytank Replenishment -- X. Mix Order -- XI. Piping Systems -- XII. Piping System Variations -- XIII. Materials of Construction -- XIV. Slurry Settling -- XV. Slurry Room Location -- XVI. Pressure and Flow Consistency -- XVII. Back-Pressure Devices -- XVIII. Slurry Consumption Ramp -- XIX. System Redundancy -- XX. Valve Boxes -- XXI. Storage Tanks -- XXII. Agitation -- XXIII. Metrology -- XXIV. Filtration -- XXV. Slurry System Maintenance -- XXVI. Waste Disposal -- References -- Chapter 4. Modeling and Simulation -- I. Introduction -- II. Wafer-Scale Models -- III. Patterned Wafer CMP Modeling -- IV. Die-Level Modeling of Ild CMP -- V. Models for Metal Polishing -- VI. Summary and Status -- References -- Chapter 5. Consumables I: Slurry -- I. Introduction -- II. Abrasives -- III. Slurry Solution -- IV. Comparisons Among Slurries -- References -- Chapter 6. CMP Consumablesii: Pad -- I. Introduction -- II. Classes of Pads and Their Manufacture -- III. Structure, Properties, and Their Relationship to the Polishing Process. , IV. Application to Semiconductor Processing -- References -- Chapter 7. Post-CMP Clean -- I. Introduction -- II. Surface Configurations after CMP Processes -- III. Cleaning Requirements after CMP Processes -- IV. Corrosion Effects -- V. Slurry Removal -- VI. Metallic Contamination Removal -- VII. Damaged Layer Removal -- VIII. Final Passivation -- IX. Examples of Practical Post-CMP Cleaning Processes -- X. Conclusion -- References -- Chapter 8. CMP Metrology -- I. Introduction -- II. Reflectometry -- III. Defectivity Monitoring -- IV. Noncontact Capacitive Measurement -- V. Total X-Ray Fluorescence -- VI. Stylus Profilometry (Force Measurement) -- VII. Atomic Force Microscopy -- VIII. Four-Point Probe -- References -- Chapter 9. Applications and CMP-Related Process Problems -- I. Introduction -- II. Oxide CMP Within-Wafer Nonuniformity (WIWNU) -- III. Post-CMP Oxide Thickness Control -- IV. Defectivity -- V. Tungsten CMP Problems -- VI. Other Problems -- References -- Index -- Contents of Volumes in This Series.