In:
Angewandte Chemie, Wiley, Vol. 127, No. 13 ( 2015-03-23), p. 4077-4081
Abstract:
The device performance of sensitizer‐architecture solar cells based on a CuSbS 2 light sensitizer is presented. The device consists of F‐doped SnO 2 substrate/TiO 2 blocking layer/mesoporous TiO 2 /CuSbS 2 /hole‐transporting material/Au electrode. The CuSbS 2 was deposited by repeated cycles of spin coating of a Cu‐Sb‐thiourea complex solution and thermal decomposition, followed by annealing in Ar at 500 °C. Poly(2,6‐(4,4‐bis‐(2‐ethylhexyl)‐4 H ‐cyclopenta[2,1‐ b ;3,4‐ b ′]dithiophene)‐alt‐4,7(2,1,3‐benzothiadiazole)) (PCPDTBT) was used as the hole‐transporting material. The best‐performing cell exhibited a 3.1 % device efficiency, with a short‐circuit current density of 21.5 mA cm −2 , an open‐circuit voltage of 304 mV, and a fill factor of 46.8 %.
Type of Medium:
Online Resource
ISSN:
0044-8249
,
1521-3757
DOI:
10.1002/ange.v127.13
DOI:
10.1002/ange.201411329
Language:
German
Publisher:
Wiley
Publication Date:
2015
detail.hit.zdb_id:
505868-5
detail.hit.zdb_id:
506609-8
detail.hit.zdb_id:
514305-6
detail.hit.zdb_id:
505872-7
detail.hit.zdb_id:
1479266-7
detail.hit.zdb_id:
505867-3
detail.hit.zdb_id:
506259-7
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