In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 1S ( 1994-01-01), p. 905-
Abstract:
This paper reports a fabrication technology of polycrystalline silicon (poly-Si) “slit nano wire”, with dimensions of less than 10 nm. The processing procedures consist of a 100 nm electron beam lithography, precision dry etching, conformable deposition of silicon dioxide layer, slit etching, conformable deposition of doped amorphous silicon (a-Si) layer and etch back. The resulting poly-Si “slit nano wire” layer measures less than 10 nm in width as ascertained by a cross section transmission electron microscope (X-TEM). A possible application of the “slit nano wire” to a future optoelectronic devices is also discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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