In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 5R ( 1996-05-01), p. 2573-
Abstract:
We report an analytical velocity overshoot model for 0.1µm N-channel metal-oxide-silicon (NMOS) devices taking into account energy transport. As verified by 2D simulation results, the analytical velocity overshoot model gives a good prediction of the IV characteristics.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.2573
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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