In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 2R ( 1995-02-01), p. 430-
Kurzfassung:
GaAs p-n structures have been grown on a GaAs(111)A substrate by controlling the molecular beam epitaxy (MBE) growth conditions using only Si dopant. Cathodoluminescence (CL) spectra and I-V characteristics for the samples confirm the p-n structure. However, the quality of p-n structure is strongly affected by pausing after changing the growth conditions; as the pausing time is decreased, the breakdown voltage increases and the peak intensity of the emission spectrum increases drastically. Furthermore, for a pausing time of 1 min, emission in the p-layer appears at 14 K with increasing forward current; this indicates a decrease in the deep levels. As a result, strong emission of 875 nm is observed even at room temperature.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1995
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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