In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 4S ( 2001-04-01), p. 2954-
Abstract:
We propose a new Body-Effect-assisted NOR-type (BeNOR) flash memory for multilevel storage application. Body effect assisted self-convergent programming employs secondary electron injection but a different operation bias from the CHannel Initiated Secondary ELectron (CHISEL) flash. Accurately programmed states are accomplished by the linear dependence of V TH on the bit-line voltage; therefore, parallel multilevel programming and elimination or reduction of bit-by-bit verification can be achieved. In this paper, programming power consumption and reliability considerations are also assessed for efficient and long-term operation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.2954
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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